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Thermally induced phase separation of Si-Sb-Te alloy

机译:Si-Sb-Te合金的热诱导相分离

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摘要

Si2Sb2Te5 alloys have potential applications for future chalcogenide random access memory (C-RAM). The thermally induced crystallization process of Si2Sb2Te5 alloys was characterized by in situ heating experiments with transmission electron microscopy (TEM). The crystallization of a Si2Sb2Te5 amorphous film was initiated at around 160 degrees C, concomitant with a phase separation process. The crystallized product of the amorphous Si2Sb2Te5 film was a nano-scale (10 nm in local-domain size) composite material consisting of amorphous Si (a-Si), crystalline Sb2Te3 (c-Sb2Te3) and crystalline Te (c-Te).
机译:Si2Sb2Te5合金在未来硫族化物随机存取存储器(C-RAM)中具有潜在的应用。 Si2Sb2Te5合金的热诱导结晶过程通过透射电子显微镜(TEM)的原位加热实验进行了表征。 Si 2 Sb 2 Te 5非晶膜的结晶在约160摄氏度下开始,并伴随有相分离过程。非晶Si 2 Sb 2 Te 5膜的结晶产物是由非晶Si(a-Si),结晶Sb2Te3(c-Sb2Te3)和结晶Te(c-Te)组成的纳米级(局部域尺寸为10nm)复合材料。

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