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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Oxygen assisted photoinduced changes in Ge_(39)Ga_2S _(59) amorphous thin film
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Oxygen assisted photoinduced changes in Ge_(39)Ga_2S _(59) amorphous thin film

机译：氧辅助光诱导Ge_（39）Ga_2S _（59）非晶态薄膜的变化

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摘要

Annealing of the Ge_(39)Ga_2S_(59) virgin amorphous thin film leads to the blue shift of the optical band gap owing to an increase of the film network order and to a decrease in the refractive index associated with both the film thickness expansion and a decrease in the mean molecular polarizability. Virgin film is only a little bleached by the illumination with the band gap or over band gap photons while the film annealed in the argon is practically insensitive to such illumination. Illumination by UV photons leads to significant changes in the surface topology of the virgin or annealed film. It is suggested that observed surface topology changes originate from the film oxidation, which is supported by: (i) Fourier transform infrared spectroscopy evidencing the presence of the broad absorption band in the region 750-900 cm~(-1) assigned to asymmetric stretching vibrations of the Ge-O-Ge bridge, (ii) the presence of the Raman feature at around 420 cm ~(-1) assigned to symmetric stretching of bridging oxygen in O _3Ge-O-GeO_3 units and (iii) Atomic Force Microscopy indicating formation of some protrusions with entities reminiscent of isolated hexagonal particles which could be assigned to GeO_2 microcrystalline particles.
机译：原始的Ge_（39）Ga_2S_（59）非晶态薄膜的退火会导致光学带隙的蓝移，这是由于薄膜网络阶数增加以及与薄膜厚度膨胀和厚度降低相关的折射率降低所致。平均分子极化率降低。在带隙或带隙以上的光子照射下，原始膜仅被一点漂白，而在氩气中退火的膜实际上对这种照射不敏感。紫外线光子照射会导致原始薄膜或退火薄膜的表面拓扑发生重大变化。建议观察到的表面拓扑变化是由膜氧化引起的，这由以下因素支持：（i）傅立叶变换红外光谱法证明在不对称拉伸的750-900 cm〜（-1）区域中存在宽吸收带Ge-O-Ge桥的振动，（ii）约420 cm〜（-1）处的拉曼特征的存在与O _3Ge-O-GeO_3单元中桥接氧的对称拉伸有关，以及（iii）原子力显微镜这表明某些突起的形成使人联想到可以分配给GeO_2微晶颗粒的孤立的六角形颗粒。

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