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In situ observation of beta-ray induced UV optical absorption in a-SiO2: Radiation darkening and room temperature, recovery

机译:α-SiO2中β射线诱导的UV光吸收的原位观察:辐射变暗和室温,恢复

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摘要

We studied the optical absorption in the 3.0-6.2 eV range induced in bulk amorphous SiO2 by beta-ray irradiation up to similar to 1 MGy at room temperature. The induced absorption was measured in situ both during irradiation and in the post irradiation time. Our data evidence E', center as the main defect induced by irradiation and the partial decay of their absorption band at about 5.8 eV after irradiation. A quantitative analysis of the time evolution of the induced absorption shows that the transmission recovery observed after irradiation is compatible with the reaction of radiation-induced defects with H-related (H-2, H2O) species diffusing in the amorphous matrix.
机译:我们研究了在室温下通过β射线辐照在大块无定形SiO2中诱导的3.0-6.2 eV范围内的光吸收。在辐照期间和辐照后时间均原位测量诱导的吸收。我们的数据证明,E'是辐照引起的主要缺陷,辐照后其吸收带在5.8 eV处部分衰减。对诱导吸收的时间演化的定量分析表明,辐照后观察到的透射恢复与辐射诱导的缺陷与扩散到非晶基质中的H相关(H-2,H2O)物质的反应兼容。

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