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Refractive-index dispersion of glassy semiconductors in the pseudo-binary As2Se3-SbSI system

机译:准二元As2Se3-SbSI系统中玻璃态半导体的折射率色散

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摘要

The bulk chalcogenide glasses in the pseudo-binary system (As2Se3)(100-x)(SbSI)(x) (with x = 20, 30, 50, 70 and 80 at.%) were prepared from high-purity elemental components by melt-quenching technique. It is a system with the variable ratio of classical amorphous compound As2Se3 and the molecule of antimony-sulphoiodide. SbSI, which in the monocrystal form is characterized as a ferroelectric. The refractive-index behaviour (magnitude and spectral dispersion) of investigated glasses was determined by the prism method and analyzed, To calculate and discuss the parameters of dispersion in the band gap region three different approaches were used (Cauchy, Sellmeier and Wemple-DiDomenico single-oscillator model). The comparison of the results shows good agreement between all applied models. It was found that the value of the refractive-index shows normal dispersion behaviour and increases with the increase of Sb (or SbSI) content in the investigated system, whereas the optical gap of these glasses E-g slightly decreases.
机译:用高纯元素组分通过以下方法制备拟二元体系(As2Se3)(100-x)(SbSI)(x)(x = 20、30、50、70和80 at。%)的块状硫族化物玻璃熔体淬火技术。它是具有可变比例的经典非晶态化合物As2Se3和锑硫碘化物分子的系统。 SbSI,以单晶形式表征为铁电体。通过棱镜方法确定并分析了所研究玻璃的折射率行为(幅度和光谱色散),为了计算和讨论带隙区域中色散的参数,使用了三种不同的方法(Cauchy,Sellmeier和Wemple-DiDomenico single -振荡器模型)。结果的比较表明,所有应用模型之间都具有良好的一致性。发现在所研究的系统中,折射率的值表现出正常的色散行为并且随着Sb(或SbSI)含量的增加而增加,而这些玻璃E-g的光学间隙略微减小。

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