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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Structure and transport properties of integrated distributed electron cyclotron resonance grown micro-crystalline silicon
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Structure and transport properties of integrated distributed electron cyclotron resonance grown micro-crystalline silicon

机译：集成分布电子回旋共振生长微晶硅的结构和传输性能

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A new reactor utilizing electron cyclotron resonance at 2.45 GHz is used for the deposition of microcrystalline silicon. Due to its planar geometry, such deposition process can be scaled for deposition onto large surfaces. Ultraviolet-visible ellipsometry, activation energy measurements and time resolved microwave conductivity (TRMC) measurements were made on the samples. The crystalline volume fraction obtained varied between 50% and 80%, as found by ellipsometry, and the growth rate is around 0.3 nm/s. The effective mobility is found to be between 1 and 6 cm(2) V-1 s(-1). The effect of the preparation conditions, such as substrate temperature, pressure, H-2 dilution and microwave power was investigated. This technology seems to be promising approach for the deposition of mu c-Si based thin film transistors. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 13]
机译：一种新的利用2.45 GHz电子回旋共振的反应器用于沉积微晶硅。由于其平坦的几何形状，这种沉积工艺可以按比例缩放以沉积到大表面上。在样品上进行了紫外可见光椭圆偏振法，活化能测量和时间分辨微波电导率（TRMC）测量。如通过椭圆偏振法所发现的，所获得的晶体体积分数在50％至80％之间变化，并且生长速率为约0.3nm / s。发现有效迁移率在1至6 cm（2）V-1 s（-1）之间。研究了制备条件的影响，如底物温度，压力，H-2稀释度和微波功率。该技术似乎是用于沉积基于μc-Si的薄膜晶体管的有前途的方法。 （C）1998 Elsevier Science B.V.保留所有权利。 [参考：13]

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