...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Column III and V elements as substitutional dopants in hydrogenated amorphous germanium
【24h】

Column III and V elements as substitutional dopants in hydrogenated amorphous germanium

机译：III和V列元素在氢化非晶态锗中作为取代掺杂剂

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The doping properties of group III(B, Al, Ga, In) and V (N, P, As) impurities in a-Ge:H films deposited by rf sputtering were systematically studied. The Fermi level (E-F), band-gap (E-04), Urbach (E-0) tail energies, density of midgap defects, N,, and hydrogen content were determined as a function of the impurity concentration by standard methods. It was found that, for a constant amount of different dopant impurities, different E-F shifts are obtained, indicating different doping efficiencies. For Al, Ga, and In, the defect density displays a common behavior as a function of N-imp, N-D increasing linearly with N-imp for N-imp > 2 x 10(19) cm(-3). In contrast, for B and all group V elements a N-D alpha (N-imp)(1/2) relationship is found. These findings indicate that, for the case of p-type heavy metal doping of a-Ge:H, deep defects are induced by inactive impurities, whereas n-type doping appears to be consistent with a charge-induced bond breaking mechanism. A series of different doping-induced effects highlights the importance of the chemical aspects of substitutional doping in a-semiconductors. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 16]
机译：系统研究了通过射频溅射沉积的a-Ge：H薄膜中的III族（B，Al，Ga，In）和V（N，P，As）杂质的掺杂性能。通过标准方法确定了费米能级（E-F），带隙（E-04），Urbach（E-0）尾能，中带隙缺陷密度，N和氢含量。已经发现，对于恒定量的不同掺杂剂杂质，获得了不同的E-F位移，这表明不同的掺杂效率。对于Al，Ga和In，缺陷密度显示出作为N-imp的函数的常见行为，对于N-imp> 2 x 10（19）cm（-3），N-D随N-imp线性增加。相反，对于B和所有V组元素，发现N-D alpha（N-imp）（1/2）关系。这些发现表明，对于a-Ge：H的p型重金属掺杂，由惰性杂质引起深缺陷，而n型掺杂似乎与电荷诱导的键断裂机理一致。一系列不同的掺杂诱导效应凸显了a型半导体中替代掺杂化学方面的重要性。 （C）1998 Elsevier Science B.V.保留所有权利。 [参考：16]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号