Nuclear reaction analysis of hydrogen in the buried SiO2 layer of Si/SiO2/Si structures

Krauser J.; Hughes HL.; Revesz AG.

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Nuclear reaction analysis of hydrogen in the buried SiO2 layer of Si/SiO2/Si structures

机译：Si / SiO2 / Si结构的SiO2埋层中氢的核反应分析

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The concentration of hydrogen introduced by a heat treatment into the buried oxide (BOX) layer of Si/SiO2/Si structures (SIMOX and unibond) was determined by nuclear reaction technique. The areal density of H atoms is of the order of 10(14)/cm(2), regardless whether the top Si layer was removed or not. This value is much less than the reported density of mobile protons in these structures prepared in a similar manner. Thus, it is unlikely that the increased density of mobile protons near the edges of patterned top Si layer is due to the enhanced diffusion of H atoms there. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 5]

机译：通过核反应技术确定通过热处理引入到Si / SiO2 / Si结构（SIMOX和单键）的掩埋氧化物（BOX）层中的氢浓度。 H原子的面密度约为10（14）/ cm（2），无论是否去除了顶层Si层。该值远小于以类似方式制备的这些结构中所报道的移动质子的密度。因此，不太可能在图案化的顶部Si层的边缘附近增加移动质子的密度是由于H原子在此处的扩散增强。（C）2001 Elsevier Science B.V.保留所有权利。 [参考：5]

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《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |2001年第2期|共3页
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Krauser J.; Hughes HL.; Revesz AG.;
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1. Nuclear reaction analysis of hydrogen in the buried SiO2 layer of Si/SiO2/Si structures [J] . Krauser J., Hughes HL., Revesz AG. Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2001,第1a2期

机译：Si / SiO2 / Si结构的SiO2埋层中氢的核反应分析
2. Silicon-on-Insulator Structures with a Nitrogenated Buried SiO2 Layer: Preparation and Properties [J] . Tyschenko I.E., Popov V.P. Semiconductors . 2011,第3期

机译：具有氮化的SiO2埋层的绝缘体上硅结构：制备和性能
3. Catalytic Performance and Reaction Pathways of Cu/SiO2 and ZnO/SiO2 for Dehydrogenation of Ethanol to Acetaldehyde [J] . Ohira Masahiro, Liu Huimin, He Dehua, Journal of the Japan Petroleum Institute . 2018,第4期

机译：Cu / SiO2和ZnO / SiO2的催化性能和反应途径，用于乙醇脱氢至乙醛
4. Enhancing the responsivity of UV to visible by inserting a SiO2 layer between p-Si and i-ZnO for the heterojunction photodiode with p-Si/SiO2/i-ZnO-ZnO structure [C] . Wu William-Ting Han, Hwang Jun-Dar 2013 International Symposium on Next-generation Electronics . 2013

机译：通过在p-Si和i-ZnO之间插入SiO2层以用于具有p-Si / SiO2 / i-ZnO / n-ZnO结构的异质结光电二极管，提高UV对可见光的响应度
5. Interfacial Thermal Conductance Between Monolayer WSe2 and SiO2 with Consideration of Radiative Electron-Hole Recombination [D] . Hunter, Nicholas. 2020

机译：考虑到辐射电子空穴重组单层WSE2和SiO2之间的界面热敏性
6. FEM Analysis of Sezawa Mode SAW Sensor for VOC Based on CMOS Compatible AlN/SiO2/Si Multilayer Structure [O] . Muhammad Zubair Aslam, Varun Jeoti, Saravanan Karuppanan, 2018

机译：基于CMOS兼容AlN / SiO2 / Si多层结构的VOC Sezawa模式SAW传感器的有限元分析。
7. Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GexSi1-x/SiO2/(100) Si structures with nm-thin GexSi1-x layers [O] . Madia Oreste, Nguyen A. P. D, Thoan N. H, 2014

机译：应变对凝结生长具有纳米GexSi1-x层的SiO2 / GexSi1-x / SiO2 /（100）Si结构的Ge悬空键界面缺陷的钝化效率的影响
8. Superlattice Multinanolayered Thin Films of SiO2/SiO2 + Ge for Thermoelectric Device Applications. [R] . Budak, S., Parker, R., Smith, C., 2013

机译：用于热电器件的超晶格siO2 / siO2 + Ge多层薄膜。

Nuclear reaction analysis of hydrogen in the buried SiO2 layer of Si/SiO2/Si structures

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