We recently found that amorphization is induced in Si by MeV electron irradiation. In order to account for the steady-state diagram under electron irradiation, we propose a phenomenological theory which takes into account the two competing mechanisms, namely amorphization by higher energy recoils and recrystallization by lower energy recoils as well as thermal process. We apply the new amorphization method to fabricating artificial arrangements of the columns of a-Si in a c-Si film, and discuss its use for photonic crystal based on photonic band calculation. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 9]
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