Defect creation kinetics in amorphous silicon thin film transistors

Wehrspohn RB.; Deane SC.; Powell MJ.

首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Defect creation kinetics in amorphous silicon thin film transistors

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Defect creation kinetics in amorphous silicon thin film transistors

机译：非晶硅薄膜晶体管中的缺陷产生动力学

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The rate of defect creation in amorphous silicon thin film transistors. under gate bias stress. is proportional to N(BT)(alpha)t(beta-1), where N-BT is the bandtail carrier density. Experimentally alpha is 1.5-1.9. while beta is 0.5-0.6. We have developed a model to account for this dependence, based on an exponential distribution of barriers to defect creation. The key new feature of our model is that we include the backward reaction, as well as the forward reaction, and also the effect of the charge-state of the formed defects. Considering the forward reaction only, leads to alpha = beta, while a full analysis leads to the simple new result that alpha approximate to 3beta, which is in excellent agreement with experiments. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 12]

机译：非晶硅薄膜晶体管中缺陷产生的速率。在栅极偏置应力下。与N（BT）αt（β-1）成正比，其中N-BT是带状载流子密度。实验上，alpha为1.5-1.9。而beta是0.5-0.6。我们基于缺陷产生障碍的指数分布，开发了一个模型来解决这种依赖性。我们模型的关键新特征是，我们既包括后向反应，也包括前向反应，以及所形成缺陷的电荷状态的影响。仅考虑正向反应，将得出alpha = beta，而全面分析将得出简单的新结果，即alpha接近3beta，这与实验非常吻合。（C）2002 Elsevier Science B.V.保留所有权利。 [参考：12]

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《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |2002年第1期|共5页
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Wehrspohn RB.; Deane SC.; Powell MJ.;
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1. Defect creation kinetics in amorphous silicon thin film transistors [J] . Wehrspohn RB., Deane SC., Powell MJ. Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2002,第Pta1期

机译：非晶硅薄膜晶体管中的缺陷产生动力学
2. Unification of the time and temperature dependence of dangling-bond-defect creation and removal in amorphous-silicon thin-film transistors [J] . Deane SC., Powell MJ., Wehrspohn RB. Physical Review, B. Condensed Matter . 1998,第19期

机译：非晶硅薄膜晶体管中悬空键缺陷产生和去除的时间和温度依赖性的统一
3. DEFECT CREATION IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J] . Graeff CFO., Stutzmann M., Powell MJ., Physical Review, B. Condensed Matter . 1995,第7期

机译：非晶硅薄膜晶体管的缺陷产生
4. Mechanisms for Defect Creation and Removal in Hydrogenated and Deuterated Amorphous Silicon Studied Using Thin Film Transistors [C] . Andrew J. Flewitt, Shufan Lin, William I. Milne, Materials Research Society Symposium on Amorphous and Polycrystalline Thin-Film Silicon Science and Technology . 2007

机译：使用薄膜晶体管研究氢化和氘化非晶硅中缺陷的产生和去除机制
5. Amorphous and microcrystalline silicon thin films grown by photon assisted electron cyclotron resonance chemical vapor deposition for heterojunction solar cells and thin film transistors. [D] . Song, Young Joo. 2000

机译：通过光子辅助的电子回旋共振化学气相沉积法生长的非晶和微晶硅薄膜，用于异质结太阳能电池和薄膜晶体管。
6. Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors [O] . Xianzhe Liu, Hua Xu, Honglong Ning, -1

机译：非晶硅氧化锡薄膜晶体管中的纳米级自形成金属氧化物中间层
7. Differences in the densities of charged defect states and kinetics of Staebler-Wronski effect in undoped (nonintrinsic) hydrogenated amorphous silicon thin films [O] . Güneş Mehmet, Wronski Christopher R. 1997

机译：未掺杂（非本征）氢化非晶硅薄膜中带电缺陷态密度和Staebler-Wronski效应动力学的差异
8. Effects of spatial location of defect states on the switching characteristics of amorphous and polycrystalline silicon thin film transistors: A numerical simulation using AMPS 2-D [R] . Smith, J. , Fonash, S. , Kalkan, A. 1994

机译：缺陷态空间位置对非晶硅和多晶硅薄膜晶体管开关特性的影响：amps 2-D的数值模拟

Defect creation kinetics in amorphous silicon thin film transistors

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