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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Surface effect on dielectric properties of semiconducting glasses
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Surface effect on dielectric properties of semiconducting glasses

机译：表面对半导体玻璃介电性能的影响

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摘要

The aim of the paper is to analyse the phenomenon of the very high permittivity of semiconducting glasses at low frequencies and to present physical and mathematical models. The problem is approached as a barrier effect due to a very thin insulating layer at the surface of the material, and the solution is based on the fact that each layer of the structure has de and polarization conductivities caused by 'free' and 'bound' carriers of electrical charge. Theoretical results are in good agreement with our measurements on semiconducting glass with a composition of 70% V2O5-30% P2O5 doped with 1% CuO and annealed in air. A proper choice of the values or their optimization may further diminish the differences between calculated and measured values. In the paper the results of our model have been compared with a simpler one in which the properties of electrode polarization effects are expressed by an ideal capacitor.
机译：本文的目的是分析半导体玻璃在低频下具有很高的介电常数的现象，并提供物理和数学模型。由于材料表面的绝缘层非常薄，该问题被视为一种屏障效应，解决方案基于以下事实：结构的每一层都具有由“自由”和“结合”引起的去极化和极化电导率电荷的载体。理论结果与我们对含70％V2O5-30％P2O5掺杂1％CuO并在空气中退火的半导体玻璃的测量结果非常吻合。正确选择值或优化它们可以进一步减小计算值和测量值之间的差异。在本文中，我们的模型结果已与一种较简单的模型进行了比较，在该模型中，电极极化效应的特性由理想电容器表示。

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