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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Photo-induced synthesis of amorphous SiO2 film from tetramethoxy-silane on polymethylmethacrylate at room temperature
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Photo-induced synthesis of amorphous SiO2 film from tetramethoxy-silane on polymethylmethacrylate at room temperature

机译：室温下在聚甲基丙烯酸甲酯上由四甲氧基硅烷光诱导合成非晶态SiO2薄膜

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摘要

A new technique, formation of an SiO2 film on polymethylmethacrylate (PMMA) with tetramethoxysilane (TMOS) as a starting material, by irradiation with a Kr-2 excimer lamp (8.5 eV, 146 nm), and at room temperature was reported. Two photo-induced reactions are involved in this process; the scission of side chains of PMMA and the photochemical reaction of TMOS. The scission of side chains of PMMA with the first irradiation is an essential procedure to fabricate a transparent PMMA coated with TMOS. TMOS coating on PMMA was carried out between the first irradiation and the second irradiation. With the second irradiation, TMOS liquid on the irradiated PMMA turned into a solid which was harder than aluminum. The refractive index of the film is 1.48 +/- 0.03 at 633 nm which is almost the same value as the refractive index of SiO2 fabricated with the thermal oxidation of silicon (1.46). In the infrared spectrum all bands related to alkyl groups disappeared and the line shape was close to that of thermal SiO2. Though etching rate of the film is 10 times faster than that of thermal SiO2, we propose that photo-induced formation of SiO2 having organic impurities of less than 1% succeeded. (C) 1997 Elsevier Science B.V.
机译：报道了一种新技术，该技术通过在室温下用Kr-2准分子灯（8.5 eV，146 nm）照射，在以四甲氧基硅烷（TMOS）为原料的聚甲基丙烯酸甲酯（PMMA）上形成SiO2膜。该过程涉及两个光致反应。 PMMA的侧链断裂和TMOS的光化学反应第一次辐照切割PMMA的侧链是制造涂有TMOS的透明PMMA的必要步骤。在第一辐射和第二辐射之间进行在PMMA上的TMOS涂覆。随着第二次照射，被照射的PMMA上的TMOS液体变成比铝硬的固体。膜在633 nm处的折射率为1.48 +/- 0.03，与通过硅的热氧化制备的SiO2的折射率（1.46）几乎相同。在红外光谱中，与烷基相关的所有谱带均消失，线形接近于热SiO2。尽管该膜的蚀刻速率比热SiO2的蚀刻速率快10倍，但我们建议成功地光诱导形成有机杂质小于1％的SiO2。 （C）1997年Elsevier Science B.V.

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