Interface engineering of photoelectrochemically prepared Si surfaces

Lewerenz HJ.; Aggour M.; Murrell C.; Kanis M.; Hoffmann P.; Jungblut H. Schmeisser D.

首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Interface engineering of photoelectrochemically prepared Si surfaces

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Interface engineering of photoelectrochemically prepared Si surfaces

机译：光电化学制备的硅表面的界面工程

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The oxide of Si(111) formed by electropolishing in dilute ammonium fluoride solution is analysed by photoelectron spectroscopy using synchrotron radiation. The oxidic layer is about 3.1 nm thick and contains Si-F-x species as well as oxyfluorides. The oxyfluorides are found preferentially at the electropolishing layer surface. SiOH species are concentrated at the oxidic film/substrate interface. The full width half maximum of the Si 2p line indicates that the Si/electropolishing oxide interface is smoother than the Siatural oxide interface. (C) 2002 Published by Elsevier Science B.V. [References: 8]

机译：通过使用同步加速器辐射的光电子能谱分析在稀氟化铵溶液中电抛光形成的Si（111）的氧化物。氧化层约3.1 nm厚，包含Si-F-x物质以及氟氧化物。氟氧化物优先存在于电抛光层表面。 SiOH物质集中在氧化膜/基材界面处。 Si 2p线的半峰全宽表示Si /电抛光氧化物界面比Si /天然氧化物界面光滑。（C）2002由Elsevier Science B.V.出版[参考文献：8]

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《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |2002年第1期|共5页
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Lewerenz HJ.; Aggour M.; Murrell C.; Kanis M.; Hoffmann P.; Jungblut H. Schmeisser D.;
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中图分类晶体学;
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1. Interface engineering of photoelectrochemically prepared Si surfaces [J] . Lewerenz HJ., Aggour M., Murrell C., Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2002,第1期

机译：光电化学制备的硅表面的界面工程
2. Improving the Photoelectrochemical Performance of Hematite by Employing a High Surface Area Scaffold and Engineering Solid–Solid Interfaces [J] . Pongkarn Chakthranont, Blaise A. Pinaud, Linsey C. Seitz, Advanced materials interfaces . 2016,第7期

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Interface engineering of photoelectrochemically prepared Si surfaces

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