Transport properties of hot-wire CVD mu c-Si : H layers for solar cells

Niikura C.; Poissant Y.; Gueunier ME.; Kleider JP.; Bouree JE.

首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Transport properties of hot-wire CVD mu c-Si : H layers for solar cells

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Transport properties of hot-wire CVD mu c-Si : H layers for solar cells

机译：太阳能电池用热线CVD mu c-Si：H层的传输特性

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Transport properties of microcrystalline silicon (pc-Si:H) films prepared by hot-wire/catalytic chemical vapor deposition (HWCVD) have been investigated by steady-state photocarrier grating (SSPG) and conductivity measurements. Improved diffusion length has been obtained when the hydrogen dilution approaches the value corresponding to the amorphous-microcrystalline phase transition. i.e. 0.92 +/- 0.01. An efficiency of 5.1% has been obtained for muc-Si:H n-i-p superstrate type solar cells on a glass substrate, with a 3.5 mum thick i-layer deposited by HWCVD, using a variable hydrogen dilution (VHD) process with the final dilution value close to 0.92. Future use of a n-i-p substrate structure should improve the performance of HWCVD muc-Si:H solar cells. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 13]

机译：已经通过稳态光载流子光栅（SSPG）和电导率测量研究了通过热线/催化化学气相沉积（HWCVD）制备的微晶硅（pc-Si：H）薄膜的传输特性。当氢稀释达到对应于非晶-微晶相变的值时，获得了改善的扩散长度。即0.92 +/- 0.01。对于玻璃基板上的muc-Si：H nip压合上层型太阳能电池，采用可变氢稀释（VHD）工艺并通过最终稀释值，通过HWCVD沉积了3.5微米厚的i层，获得了5.1％的效率。接近0.92。将来使用n-i-p衬底结构应该可以改善HWCVD muc-Si：H太阳能电池的性能。（C）2002 Elsevier Science B.V.保留所有权利。 [参考：13]

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《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |2002年第2期|共5页
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Niikura C.; Poissant Y.; Gueunier ME.; Kleider JP.; Bouree JE.;
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1. Transport properties of hot-wire CVD mu c-Si : H layers for solar cells [J] . Niikura C., Poissant Y., Gueunier ME., Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2002,第Pta2期

机译：太阳能电池用热线CVD mu c-Si：H层的传输特性
2. Doping of a-SiCXH films including mu c-Si : H by hot-wire CVD and their application as a wide gap window for heterojunction solar cells [J] . Itoh T., Fukunaga K., Katoh Y., Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2002,第1a4期

机译：通过热线CVD掺杂包括mu c-Si：H的a-SiCXH薄膜及其在异质结太阳能电池的宽间隙窗口中的应用
3. Hot-wire CVD deposited n-type μc-Si films for μc-Si/c-Si heterojunction solar cell applications [J] . Shui-Yang Lien, Dong-Sing Wuu, Bing-Rui Wu, Thin Solid Films . 2008,第5期

机译：用于μc-Si/ c-Si异质结太阳能电池应用的热线CVD沉积n型μc-Si膜
4. Improved Solar Cell Performance by the Applica-tion of Hot-Wire p/I-Interface Layers in μc-Si:H Solar Cells Prepared by PECVD [C] . . 2005

机译：通过在PECVD制备的μc-Si：H太阳能电池中应用热线p / I接口层提高太阳能电池性能
5. Copper indium diselenide solar cells with MOCVD zinc oxide buffer layers. [D] . Lei, Wenhua. 1998

机译：具有MOCVD氧化锌缓冲层的铜铟二硒化物太阳能电池。
6. Enhanced Photovoltaic Properties of Perovskite Solar Cells by Employing Bathocuproine/Hydrophobic Polymer Films as Hole-Blocking/Electron-Transporting Interfacial Layers [O] . Guan-Zhi Liu, Chi-Shiuan Du, Jeng-Yue Wu, 2021

机译：通过使用浴缸/疏水聚合物膜作为空穴阻挡/电子输送界面层来增强钙钛矿太阳能电池的光伏性能
7. Improvement of μc-Si:H n–i–p cell efficiency with an i-layer made by hot-wire CVD by reverse H2-profiling [O] . Li, H. B. T., Franken, R.H., Stolk, R.L., 2008

机译：通过反向H2分析的热线CVD制备的i层改善μc-si：H n - i - p电池效率

Transport properties of hot-wire CVD mu c-Si : H layers for solar cells

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