The structure of dangling bonds having hydrogen at a nearby site in a-Si : H

Morigaki K.; Yamaguchi M.; Fujita Y.; Hikita H.

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The structure of dangling bonds having hydrogen at a nearby site in a-Si : H

机译：a-Si：H附近位置处具有氢的悬挂键结构

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We have deconvoluted the dangling bond ESR spectra into two components, one due to normal dangling bonds and the other to hydrogen-related dangling bonds in glow-discharge a-Si:H samples. The isotropic and anisotropic hyperfine interaction constants due to a hydrogen nucleus are estimated from the deconvolution. It is found that they are mutually related through a simple theoretical expression. The distance between the dangling bond site and hydrogen in the hydrogen-related dangling bond and relative densities of the above two types of dangling bonds are also estimated and discussed in correlation with the hydrogen content. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 8]

机译：我们已经将悬空键的ESR光谱解卷积为两个分量，一个是由于辉光放电a-Si：H样品中的正常悬空键，另一个是由于氢相关的悬空键。由反卷积估算出由于氢核而引起的各向同性和各向异性超精细相互作用常数。通过简单的理论表达式发现它们相互关联。还估计并讨论了与氢有关的悬挂键中的悬挂键位点与氢之间的距离以及上述两种类型的悬挂键的相对密度，并与氢含量相关联。（C）1998 Elsevier Science B.V.保留所有权利。 [参考：8]

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《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |1998年第1期|共5页
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Morigaki K.; Yamaguchi M.; Fujita Y.; Hikita H.;
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正文语种 eng
中图分类晶体学;
关键词
Dangling bonds; Hydrogen content; A-si : h;

机译：悬空键;氢含量;A-si：h;

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1. The structure of dangling bonds having hydrogen at a nearby site in a-Si : H [J] . Morigaki K., Yamaguchi M., Fujita Y., Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 1998,第Pta1期

机译：a-Si：H附近位置处具有氢的悬挂键结构
2. Hydrogen passivation effects on carbon dangling bond defects accompanying a nearby hydrogen atom in p-type CVD diamond [J] . Mizuochi N, Ogura M, Isoya J, Physica, B. Condensed Matter . 2006,第0期

机译：氢钝化对p型CVD金刚石中伴随氢原子的碳悬挂键缺陷的影响
3. Created defect under illumination in a-Si : H : hydrogenated or isolated dangling bond ? [J] . Meftah AF, Meftah AM, Merazga A Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2004,第3期

机译：在a-Si：H下光照下产生的缺陷：氢化或孤立的悬空键？
4. Hydrogen passivation effects on carbon dangling bond defects accompanying a nearby hydrogen atom in p-type CVD diamond [C] . N. Mizuochi, M. Ogura, J. Isoya, International Conference on Defects in Semiconductors . 2006

机译：对P型CVD金刚石附近氢原子的碳悬垂粘合缺陷的氢钝化效应
5. Nature of iron-sulfur bonds in electron transfer and catalytic active sites: Contribution to reactivity and the role of hydrogen bonding. [D] . Dey, Abhishek. 2007

机译：电子转移和催化活性位中铁硫键的性质：对反应性的贡献和氢键的作用。
6. Hydrogen dangling bonds induce ferromagnetism in two-dimensional metal-free graphitic-C3N4 nanosheets [O] . Kun Xu, Xiuling Li, Pengzuo Chen, 2015

机译：氢悬挂键在二维无金属石墨C3N4纳米片中诱导铁磁性
7. Hole dangling-bond capture cross-sections in a-Si:H [O] . Goldie David M. 2013

机译：a-Si：H中的空穴悬挂键俘获截面
8. Hydrogen reactions with Dangling Bonds in Si and Si-SiO2 structures. [R] . Myers, S. M., Brower, K. L., Follstaedt, D. M., 1991

机译：与si和si-siO2结构中的悬空键发生氢反应。

The structure of dangling bonds having hydrogen at a nearby site in a-Si : H

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