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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Photoluminescence activity in natural silica excited in the vacuum-UV range
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Photoluminescence activity in natural silica excited in the vacuum-UV range

机译：在真空-UV范围内激发的天然二氧化硅中的光致发光活性

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摘要

We report an experimental study on the optical absorption and photoluminescence detected in samples of natural silica. Our results show that the two emission bands, #beta# (approx 3.1 eV) and #alpha#_E (approx4.3 eV), have an excitation profile in the vacuum ultraviolet region with a maximum at approx7.5 eV. This excitation profile indicates that, in terms of energy levels of the luminescent defect, there is a transition from a ground state, S_o, to a second excited state, S_2, able to excite PL emission, in addition to the well known transition corresponding to the optical absorption band, B_(2#beta#). Our data are in a quantitative agreement with 'ab initio' calculations carried out for a two-fold coordinated Ge defect in SiO_2 and exclude a correlation between the S_o->S_2 transition and the 7.6 eV E band.
机译：我们报告了对天然二氧化硅样品中检测到的光吸收和光致发光的实验研究。我们的结果表明，两个发射带，＃beta＃（约3.1 eV）和＃alpha＃_E（约4.3 eV）在真空紫外区域具有激发曲线，最大值约为7.5 eV。该激发曲线表明，就发光缺陷的能级而言，除了与之对应的众所周知的跃迁外，还有一个从基态S_o跃迁到第二激发态S_2，该跃迁能够激发PL发射。光吸收带B_（2＃beta＃）。我们的数据与针对SiO_2中的两个配位Ge缺陷进行的“从头算”计算在数量上一致，并且排除了S_o-> S_2跃迁与7.6 eV E谱带之间的相关性。

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