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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Photoluminescence of Sn-doped SiO2 excited by synchrotron radiation
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Photoluminescence of Sn-doped SiO2 excited by synchrotron radiation

机译：同步加速器辐射激发的掺锡SiO2的光致发光

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Changes in the photoluminescence (PL) of amorphous SiO2 due to Sn-doping have been investigated by synchrotron radiation, Sn-doped SiO2 samples have been produced by a controlled sol-gel procedure as well as Ge-doped samples prepared for comparison. Detailed maps of the PL and PL excitation pattern have been obtained up to the band-to-band transition energy. The results confirm the analysis of Skuja as regards the emission at 3.1 and 4.2 eV excited at about 5 eV, At higher energies, our data show that the 3.1 and 4.2 eV PL bands have another excitation region with structures at 6.7, 7.2 and 8.0 eV. Lifetimes of about 10 ns for the 4.2 eV PL and 10 mu s for the 3.1 eV PL are observed independently of the excitation energy. Data between 10 and 300 K are presented and compared with data from Ge-doped samples. The results show that high energy excitation of the 3.1 eV PL is not thermally activated, in contrast to the 4.9 eV excitation channel. Effects of the different spin-orbit coupling constants at Ge and Sn sites on PL intensity suggest that the high energy excitation channels arise from intra-center singlet-to-singlet transitions. (C) 2000 Elsevier Science B.V. All rights reserved. [References: 12]
机译：已经通过同步加速器辐射研究了由于Sn掺杂导致的非晶SiO2的光致发光（PL）的变化，已经通过可控的溶胶-凝胶程序制备了Sn掺杂的SiO2样品，并制备了Ge掺杂的样品进行比较。 PL和PL激励模式的详细图已经获得，直至带间转换能量为止。结果证实了Skuja在3.1 eV和4.2 eV处在大约5 eV激发下的发射的分析。在较高能量下，我们的数据表明3.1 eV和4.2 eV PL带具有另一个在6.7 eV，7.2 eV和8.0 eV结构的激发区。独立于激励能量，观察到4.2 eV PL的寿命约为10 ns，而3.1 eV PL的寿命约为10 s。呈现10至300 K之间的数据，并将其与掺Ge样品的数据进行比较。结果表明，与4.9 eV激发通道相比，3.1 eV PL的高能量激发未被热激活。 Ge和Sn位点上不同的自旋轨道耦合常数对PL强度的影响表明，高能激发通道是由中心内单峰到单峰跃迁产生的。 （C）2000 Elsevier Science B.V.保留所有权利。 [参考：12]

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