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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Poly-Si thin film transistors fabricated by combining excimer laser annealing and metal induced lateral crystallization
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Poly-Si thin film transistors fabricated by combining excimer laser annealing and metal induced lateral crystallization

机译：结合准分子激光退火和金属诱导的横向结晶制造的多晶硅薄膜晶体管

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Two mum long polycrystalline silicon (poly-Si) grains were obtained by irradiating a XeCl excimer laser beam on metal induced laterally crystallized (MILC) poly-Si films due to gxadual melting temperature decrease of the MILC poly-Si near the nickel-rich metal induced crystallized (MIC) poly-Si. Poly-Si thin film transistors (TFTs) fabricated by employing the large poly-Si grains, exhibited considerably improved field effect carrier mobility and ON/OFF current ratio compared with conventional MILC and/or excimer laser annealed (ELA) poly-Si TFTs due to reduction of defect density in the poly-Si channel. Our experimental results showed that the combination of ELA and MILC might be beneficial for practical device application. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 9]
机译：通过将XeCl准分子激光束照射到金属诱导的横向结晶（MILC）多晶硅膜上，获得了两个微米长的多晶硅（poly-Si）晶粒，这是由于富镍金属附近的MILC多晶硅的熔融温度下降导致的感应结晶（MIC）多晶硅。与传统的MILC和/或受激准分子激光退火（ELA）多晶硅TFT相比，采用大的多晶硅晶粒制成的多晶硅薄膜晶体管（TFT）表现出显着改善的场效应载流子迁移率和ON / OFF电流比。以减少多晶硅通道中的缺陷密度。我们的实验结果表明，ELA和MILC的组合可能对实际的设备应用有益。 （C）2002 Elsevier Science B.V.保留所有权利。 [参考：9]

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