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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Selective etching of chalcogenides and its application for fabrication of diffractive optical elements
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Selective etching of chalcogenides and its application for fabrication of diffractive optical elements

机译：硫族化物的选择性刻蚀及其在衍射光学元件制造中的应用

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Bulk samples of As and Ge based chalcogenides were synthesized from high purity elements, and thin layers (thickness d approximate to 100-5000 nm) were deposited by vacuum thermal evaporation and/or spin coating. Photoinduced structural changes were studied by Raman and IR spectroscopy. The kinetics of dissolution of thin layers in aqueous and non-aqueous alkaline solvents were studied. Both, positive and negative selective etching behaviours were found and used for production of diffractive optical elements (DOEs). Exposure with a halogen lamp through a Cr mask, classical holographical exposure using an Ar+ laser, and direct writing laser lithography using a He-Cd laser were used to produce amplitude/phase DOEs with feature sizes of 0.37-4 mum. Prepared low efficiency and low lifetime amplitude/ phase type DOEs were transformed into corrugated relief type phase DOEs by subsequent selective etching. Positive and/or negative copies of the pattern were obtained depending on the thin layer composition, its prehistory and the applied etching bath. The profiles of the structures produced by etching were subsequently investigated using AFM and REM techniques and basic performance parameters of formed DOE were measured and compared with theoretically calculated values. (C) 2003 Elsevier B.V. All rights reserved. [References: 4]
机译：由高纯度元素合成了大量的As和Ge基硫族化物样品，并通过真空热蒸发和/或旋涂法沉积了薄层（厚度d约为100-5000 nm）。通过拉曼光谱和红外光谱研究了光诱导的结构变化。研究了薄层在水性和非水性碱性溶剂中的溶解动力学。发现了正选择性刻蚀行为和负选择性刻蚀行为，并将其用于衍射光学元件（DOE）的生产。使用卤素灯通过Cr掩模进行曝光，使用Ar +激光进行经典全息照相曝光以及使用He-Cd激光进行直接写入激光光刻来产生幅度/相位DOE，其特征尺寸为0.37-4 mum。通过随后的选择性蚀刻，将准备好的低效率和低寿命幅度/相位型DOE转换为波纹浮雕型相位DOE。根据薄层组成，其史前和所施加的蚀刻浴获得图案的正和/或负拷贝。随后使用AFM和REM技术研究通过蚀刻产生的结构的轮廓，并测量形成的DOE的基本性能参数，并将其与理论计算值进行比较。 （C）2003 Elsevier B.V.保留所有权利。 [参考：4]

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