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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Preparation and properties of hydrogen ion-sensitive field effect transistors with sol-gel-derived Mg-modified lead titanate gate
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Preparation and properties of hydrogen ion-sensitive field effect transistors with sol-gel-derived Mg-modified lead titanate gate

机译：溶胶凝胶衍生的Mg修饰的钛酸铅栅极对氢离子敏感的场效应晶体管的制备及性能

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摘要

A sol-gel-derived Mg-modified lead titanate (PMT) membrane has been applied successfully as a novel hydrogen ion-sensitive layer. The fabrication parameters and characteristics of the amorphous PMT membrane are determined at a firing temperature of 350-450 degreesC and Mg content below 7 mol% via differential thermal, thermogravimetric and X-ray diffraction analyses. The optimized fabrication parameters of the PMT membrane for hydrogen ion-sensitive field effect transistors (ISFETs) include a Mg content of 4-5 mol%, thickness of 0.5 mum and firing temperature of 400 degreesC. These parameters were determined via capacitance-voltage measurements of the electrolyte-insulator-semiconductor structure. These membranes exhibit a quasi-Nernstian response of 58-59 mV/pH, good surface adsorption and corrosion resistant characteristics. The output characteristics of the PMT gate ISFET are very similar to those of metal oxide field effect transistors at a specific pH concentration. In the saturation region, the pH response and linearity can be controlled by adjusting the gate-source voltage (V-GS), e.g. the pH responses of -8.4, -24.3 and -32.7 muA/pH and the correlation coefficients of 0.99067, 0.99959 and 0.99963 at V-GS = 1, 3 and 5 V can be obtained, respectively. In the non-saturation region, a linear pH response exists at about 59 mV/pH. (C) 2003 Elsevier.B.V. All rights reserved. [References: 23]
机译：溶胶凝胶衍生的Mg修饰的钛酸铅（PMT）膜已成功用作新型氢离子敏感层。通过差示热，热重和X射线衍射分析，在350-450℃的烧成温度和低于7mol％的Mg含量下确定无定形PMT膜的制造参数和特性。用于氢离子敏感型场效应晶体管（ISFET）的PMT膜的优化制造参数包括4-5 mol％的Mg含量，0.5微米的厚度和400摄氏度的烧成温度。这些参数是通过电解质-绝缘体-半导体结构的电容-电压测量确定的。这些膜表现出58-59 mV / pH的准能斯特响应，良好的表面吸附和耐腐蚀特性。在特定的pH浓度下，PMT栅极ISFET的输出特性与金属氧化物场效应晶体管的输出特性非常相似。在饱和区域，可以通过调节栅极-源极电压（V-GS）来控制pH响应和线性。在V-GS = 1、3和5 V时，分别可获得-8.4，-24.3和-32.7 muA / pH的pH响应以及相关系数0.99067、0.99959和0.99963。在非饱和区域，线性pH响应存在于约59 mV / pH。 （C）2003年Elsevier.B.V。版权所有。 [参考：23]

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