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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Deposition of Er3+ doped chalcogenide glass films by excimer laser ablation
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Deposition of Er3+ doped chalcogenide glass films by excimer laser ablation

机译：准分子激光烧蚀沉积掺Er3 +的硫族化物玻璃薄膜

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The Ga2S3-GeS2:Er2S3 films of various thicknesses (from 0.3 to 5 mum) were prepared by laser ablation. The deposed films were characterized with various diagnostic techniques: optical absorption spectroscopy, X-ray fluorescence spectroscopy, secondary ion mass spectroscopy and luminescence spectroscopy. Concentrations of rare-earth ions, gallium and germanium in the target bulk glass and in the films were similar. The composition of deposited films was uniform. The location of the fundamental absorption edge was in the range from about 350 to 550 nm and depended on deposition conditions. The UV irradiation led to a large photo bleaching effect. The luminescence spectrum of the deposited film was measured. (C) 2003 Elsevier B.V. All rights reserved. [References: 6]
机译：通过激光烧蚀制备各种厚度（0.3至5μm）的Ga 2 S 3 -GeS 2：Er 2 S 3膜。通过各种诊断技术对沉积的膜进行表征：光学吸收光谱，X射线荧光光谱，二次离子质谱和发光光谱。目标大块玻璃和薄膜中的稀土离子，镓和锗的浓度相似。沉积膜的组成是均匀的。基本吸收边缘的位置在约350至550nm的范围内，并取决于沉积条件。紫外线照射导致较大的光致漂白效果。测量沉积膜的发光光谱。 （C）2003 Elsevier B.V.保留所有权利。 [参考：6]

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