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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >X-ray photoelectron spectroscopy studies of thin GexSb40-xS60 chalcogenide films
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X-ray photoelectron spectroscopy studies of thin GexSb40-xS60 chalcogenide films

机译：GexSb40-xS60硫属化物薄膜的X射线光电子能谱研究

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摘要

Thin GexSb40-xS60 (x = 5, 15, 20, 25 and 27) chalcogenide films have been investigated by X-ray photoelectron spectroscopy (XPS). X-ray photoelectron spectra show that there is a peculiarity in the relative intensity ratio of the Sb 4d photoelectron peak associated with Sb2S3 to the Sb 4d photoelectron peak associated Sb2S5 at an average co-ordination number Z of 2.65-2.67. After contamination and photo-oxidation layers were removed from the surface of the films, X-ray photoelectron spectra were measured again. It has been found that binding energies of the Ge 2p and Sb 3d(3/2) photoelectron peaks, which reflect the electronic structure at lower core energy levels, are independent of Z. However, the binding energies of the Ge 3d and Sb 4d photoelectron peaks are more sensitive to Z and have a discontinuity at Z = 2.65. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 13]
机译：已经通过X射线光电子能谱（XPS）研究了薄的GexSb40-xS60（x = 5、15、20、25和27）硫族化物薄膜。 X射线光电子能谱显示，在平均配位数Z为2.65-2.67的情况下，与Sb 2 S 3有关的Sb 4d光电子峰与与Sb 2 S 5有关的Sb 4d光电子峰的相对强度比具有特殊性。从膜表面去除污染和光氧化层后，再次测量X射线光电子光谱。已经发现，Ge 2p和Sb 3d（3/2）光电子峰的结合能在较低的核心能级上反映出电子结构，而与Z无关。但是，Ge 3d和Sb 4d的结合能光电子峰对Z更为敏感，并且在Z = 2.65处具有不连续性。 （C）2002 Elsevier Science B.V.保留所有权利。 [参考：13]

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