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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Features of charge carrier transport determined from carrier extraction current in mu c-Si : H
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Features of charge carrier transport determined from carrier extraction current in mu c-Si : H

机译：由μc-Si：H中的载流子提取电流确定的载流子传输特征

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摘要

Temperature and electric field dependencies of mobility and concentration transients of electrons and holes using modified charge extraction by the linearly increasing voltage (CELIV) method in slightly doped n-type, p-type and undoped micro crystalline silicon (muc-Si:H) have been investigated. The results indicates that: the mobility of majority carriers causes temperature and electric field dependencies of conductivity: the photoconductivity transient is mainly determined by transient of charge carrier concentration, at room temperature the charge carrier transport is controlled by multiple trapping to energetic distributed localised states; at lower temperature the features characteristic of hopping transport have been obtained. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 7]
机译：在轻度掺杂的n型，p型和未掺杂的微晶硅（muc-Si：H）中，使用线性增加电压（CELIV）方法通过改进的电荷提取，通过改进的电荷提取，电子和空穴的迁移率和浓度瞬态的温度和电场依赖性被调查。结果表明：多数载流子的迁移率引起电导率的温度和电场依赖性：光电导瞬变主要由电荷载流子浓度的瞬变决定，在室温下，电荷载流子的传输受多次俘获控制以达到高能分布的局部状态。在较低温度下，已经获得了跳跃运输的特征。 （C）2002 Elsevier Science B.V.保留所有权利。 [参考：7]

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