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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Electrical characterization of gate oxides by scanning probe microscopies
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Electrical characterization of gate oxides by scanning probe microscopies

机译：通过扫描探针显微术对栅极氧化物进行电学表征

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Ballistic electron emission microscopy (BEEM) and non-contact atomic force microscopy (NC-AFM) are used to characterize SiO2 and Al2O3 layers grown on Si(100). The effective conduction band mass and its energy dispersion in SiO2 and an offset between Al2O3 and Si conduction bands of 2.78 eV were obtained with BEEM. NC-AFM was used to image electrons, and in some instances holes, trapped in the oxide layers near the surface and in the bulk of the oxide. Modeling of the tip-surface interaction supports the interpretation of image features arising from a single electron occupying a trap. The polarity of the trapped charge was deduced from Kelvin (potential difference) images that were simultaneously recorded with the topographic images. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 29]
机译：弹道电子发射显微镜（BEEM）和非接触原子力显微镜（NC-AFM）用于表征在Si（100）上生长的SiO2和Al2O3层。使用BEEM获得了有效的导带质量及其在SiO2中的能量分散，以及Al2O3和Si导带之间的偏移为2.78 eV。 NC-AFM用于使电子成像，在某些情况下还使空穴成像，该电子被捕获在表面附近的氧化物层中以及大部分氧化物中。尖端-表面相互作用的建模支持解释由占据陷阱的单个电子引起的图像特征。从与地形图像同时记录的开尔文（电位差）图像推导捕获的电荷的极性。 （C）2002 Elsevier Science B.V.保留所有权利。 [参考：29]

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