Fast hydrogen diffusion in hydrogenated amorphous silicon observed by in situ ESR

Yamasaki S.; Das UK.; Yasuda T.

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Fast hydrogen diffusion in hydrogenated amorphous silicon observed by in situ ESR

机译：原位ESR观察到氢化非晶硅中氢的快速扩散

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A high diffusion coefficient (> 10(-10) cm(2) s(-1)) of free H atoms in hydrogenated amorphous silicon (a-Si:H) has been observed using in situ electron spin resonance (ESR). The experimental results show that dual H-diffusion paths for free-H diffusion and H inter-diffusion exist in an a-Si:H network. The light-soaking effect in a-Si:H is discussed in relation to these dual H-diffusion paths. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 17]

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《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |2002年第1期|共6页
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Yamasaki S.; Das UK.; Yasuda T.;
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1. Fast hydrogen diffusion in hydrogenated amorphous silicon observed by in situ ESR [J] . Yamasaki S., Das UK., Yasuda T. Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2002,第Pta1期

机译：原位ESR观察到氢化非晶硅中氢的快速扩散
2. In situ ultraviolet treatment in an Ar ambient upon p-type hydrogenated amorphous silicon-carbide windows of hydrogenated amorphous silicon based solar cells [J] . Seung Yeop Myong, Sang Soo Kim, Koeng Su Lim Applied Physics Letters . 2004,第26期

机译：在Ar环境中对氢化非晶硅基太阳能电池的p型氢化非晶碳化硅窗口进行原位紫外线处理
3. Quantitative in-situ Kelvin probe study of boron doping in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide [J] . Hadjadj A, Cabarrocas PRI, Equer B Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties . 1997,第6期

机译：氢化非晶硅和氢化非晶碳化硅中硼掺杂的定量原位开尔文探针研究
4. Fast in-diffusion of hydrogen at the initial stage of hydrogen plasma treatment on a-Si:H films observed by in-situ ESR measurements [C] . Ujjwal Kr. Das, Tetsuji Yasuda, Satoshi Yamasaki Materials Research Society Symposium . 2001

机译：在原位ESR测量中观察到的A-Si：H薄膜氢等离子体处理初始阶段的快速扩散
5. Proton NMR studies of PECVD hydrogenated amorphous silicon films and HWCVD hydrogenated amorphous silicon films. [D] . Herberg, Julie Lynn. 2002

机译：PECVD氢化非晶硅膜和HWCVD氢化非晶硅膜的质子NMR研究。
6. Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process [O] . Israel Vivaldo, Roberto C. Ambrosio, Roberto López, 2020

机译：通过快速热退火工艺增强氢化非晶碳化硅薄膜的光致发光
7. Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by x-ray photoelectron spectroscopy [O] . Beaudoin M., Arsenault C. J., Izquierdo R., 1989

机译：X射线光电子能谱法研究氢化非晶硅上氢化非晶硅的界面
8. Preparation and Characterization of Hydrogenated Amorphous-Silicon Films Produced by Ion Plating and Hydrogenated Amorphous-Boron Films Produced by Glow-Discharge Decomposition. Final Report, April 1, 1980-May 31, 1981 [R] . Cocks F.H, Jones, P. L. 1981

机译：添加到阅览室阅读软件下载与<<辉光放电分解制备离子镀和氢化非晶硼薄膜制备氢化非晶硅薄膜及其表征>>相似的文献。最终报告，1980年4月1日至1981年5月31日

Fast hydrogen diffusion in hydrogenated amorphous silicon observed by in situ ESR

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