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Optical and transport properties of magnetron-sputtered a-Si : H films doped with erbium

机译:掺ron的磁控溅射a-Si:H薄膜的光学和传输性质

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摘要

The luminescence properties of erbium-doped silicon offer exciting potential applications in optoclectronics. Although the optical and structural properties of this material have been studied extensively, there have been no prior examinations of the transport properties, In this paper. results from photo-thermal deflection spectroscopy (PDS) and from the study of transient photocurrents (TPC) in rf sputtered a-Si:H films doped with different concentrations of Er are presented. It is shown that films with and without Er feature a broad distribution of localised states, Incorporation of Er does not significantly influence the concentration or energy distribution of shallow states, but increases the subgap optical absorption associated with deeper states. The transient photocurrent remains detectable to times of at least 0.1 s. without evidence of significant carrier losses by recombination. This suggests that the transport properties are adequate for electroluminescent device applications. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 13]
机译:掺silicon硅的发光特性为光电子学提供了令人兴奋的潜在应用。尽管已经对该材料的光学和结构性质进行了广泛的研究,但尚未对传输性质进行过事先的检查。给出了由光热偏转光谱法(PDS)和研究射频掺杂的掺有不同浓度的Er的a-Si:H薄膜中的瞬态光电流(TPC)的结果。结果表明,具有和不具有Er的薄膜均具有较宽的局域态分布,掺入Er不会显着影响浅态的浓度或能量分布,但会增加与较深态相关的亚隙光学吸收。瞬态光电流至少可检测到0.1 s的时间。没有证据表明重组造成了严重的载体损失。这表明传输性质对于电致发光器件应用是足够的。 (C)2002 Elsevier Science B.V.保留所有权利。 [参考:13]

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