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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Infrared attenuated-total-reflection spectroscopy of microcrystalline silicon growth
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Infrared attenuated-total-reflection spectroscopy of microcrystalline silicon growth

机译：微晶硅生长的红外衰减全反射光谱

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in situ Fourier transform infrared attenuated-total-reflection (FT-IR-ATR) spectroscopy has been applied to study the growth of mu c-Si:H from an rf glow discharge decomposition of H-2-diluted SiH4 and from a layer-by-layer (LbL) process in which 3 nm-thick Si:H deposition and H-2-plasma annealing are alternately repeated. The results indicate that the FT-LR-ATR technique enables us to measure the nucleation and the grain growth with a submonolayer sensitivity. During the mu c-Si:H growth, the time evolution of the absorption intensity of the stretching modes due to interior silicon hydrides is suppressed and distinct absorption peaks due to surface hydrides emerge, which an not observable in the case for a-Si:H him growth. Temporal changes in the ATR spectrum during the LbL process at 250 degrees C have shown that the hydrogen desorption from a near surface region, especially the grain boundary and amorphous phase, caused by H-2-plasma exposure affects the crystalline nucleation and the grain growth. (C) 2000 Elsevier Science B.V. All rights reserved. [References: 14]
机译：原位傅里叶变换红外衰减全反射（FT-IR-ATR）光谱技术已被用于研究由H-2-稀释的SiH4的rf辉光放电分解和从H-稀释的SiH4层中的mu c-Si：H的生长。交替重复3纳米厚的Si：H沉积和H-2-等离子体退火的LbL（LbL）工艺。结果表明，FT-LR-ATR技术使我们能够以亚单层灵敏度测量成核和晶粒长大。在mu c-Si：H生长期间，由于内部氢化硅而导致的拉伸模式的吸收强度随时间的变化得到抑制，并且由于表面氢化物而出现了明显的吸收峰，这在a-Si情况下是不可观察的：他成长。在250摄氏度的LbL过程中，ATR光谱的时间变化表明，由于H-2-等离子体暴露而引起的氢从近表面区域（尤其是晶界和非晶相）的脱附会影响晶体形核和晶粒生长。 （C）2000 Elsevier Science B.V.保留所有权利。 [参考：14]

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