• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Scanning tunneling microscope modifications of amorphous Ge-Sb-Te films
【24h】

Scanning tunneling microscope modifications of amorphous Ge-Sb-Te films

机译：扫描隧道显微镜对非晶态Ge-Sb-Te薄膜的改性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Surface modifications produced in Ge-Sb-Te films by a scanning tunneling microscope have been studied. Three kinds of modifications appear to depend upon the applied voltages to the tip. Positive tip voltages of about 2 V produce depressions accompanying peripheral mounds, which can be accounted for as mechanical scratching by the tip. When the humidity is higher than similar to50%, tip voltages between 5 and 10 V produce depressions with no peripheral mounds, and negative tip voltages of about -10 V produce expansions. These humidity-assisted depression and expansion are assumed to be caused by electrochemical etchings and anodic oxidation processes. (C) 2003 Elsevier B.V. All rights reserved. [References: 18]
机译：已经研究了通过扫描隧道显微镜在Ge-Sb-Te薄膜中产生的表面改性。三种修改似乎取决于施加到尖端的电压。大约2 V的正尖端电压会在周围的丘上产生凹陷，这可解释为尖端的机械刮擦。当湿度高于类似的50％时，5至10 V之间的尖端电压会产生没有外围丘的凹陷，而约-10 V的负尖端电压会产生膨胀。假定这些湿度辅助的凹陷和膨胀是由电化学蚀刻和阳极氧化过程引起的。 （C）2003 Elsevier B.V.保留所有权利。 [参考：18]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号