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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Pump-probe pulse transient photoconductivity study in amorphous and microcrystalline Si : H
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Pump-probe pulse transient photoconductivity study in amorphous and microcrystalline Si : H

机译：非晶和微晶Si：H中泵浦脉冲瞬态光电导研究

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Transient photoconductivity of disordered Si:H is studied using pump-probe technique. PC transients due to a weak probe pulse are controlled by the Si dangling bond defects in defective samples. In these samples including microcrystalline Si:H, a strong amplification of the probe pulse photoconductivity transient takes place by cw or pulse bias light, In annealed a-Si:H at low temperature the effect is opposite (reduction). The amplification becomes evident when the photocarriers created by the pump pulse approach the number of defects in the sample. The amplification decays slowly up to milliseconds after the pump pulse and is related to states distributed between 0.4 and 0.6 eV. Several scenarios including an interplay between the carriers trapped into different gap states. defect relaxation. and the dependence of capture coefficients on the occupancy of the tail states are considered. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 10]
机译：使用泵浦探针技术研究了无序Si：H的瞬态光电导性。由于探测脉冲较弱而导致的PC瞬变受缺陷样品中的Si悬空键缺陷控制。在这些包括微晶Si：H的样品中，通过cw或脉冲偏置光会发生探针脉冲光电导瞬变的强烈放大。在低温退火的a-Si：H中，其作用相反（降低）。当由泵浦脉冲产生的光载流子接近样品中的缺陷数时，放大作用变得明显。放大率在泵浦脉冲后缓慢衰减直至几毫秒，并且与分布在0.4和0.6 eV之间的状态有关。几种情况包括陷入不同间隙状态的载流子之间的相互作用。缺陷松弛。并考虑了捕获系数对尾态占有率的依赖性。 （C）2002 Elsevier Science B.V.保留所有权利。 [参考：10]

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