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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Complex dynamics during the reactive scattering of Si+ (P-2) and H-2
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Complex dynamics during the reactive scattering of Si+ (P-2) and H-2

机译：Si +（P-2）和H-2反应性散射过​​程中的复杂动力学

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Reactions of silicon hydrides have recently attracted considerable attention due to their importance in plasma enhanced chemical vapor deposition (PECVD) of silicon for the microelectronics industry. Trajectories of reactive and non-reactive collisions between Si- and H-2 are simulated over a range of collision energies from 0.5 to 9 eV using the semiempirical molecular orbital method PM3. and our results lead to a much deeper understanding of one of the most fundamental reactions for deposition techniques. Vibrational. rotational and translational excitation of the SiH+ product are reported as a function of impact kinetic energy. At impact energies below 4 eV, the system passes through configurations in which all three atoms interact strongly for times that can be several orders of magnitude longer than one rotational period. At higher translational energies, the product distributions are consistent with a direct reaction mechanism. All possible energy transfer mechanisms are studied for both low and high impact energies and possible implications for the deposition of silicon are discussed. (C) 2002 Published by Elsevier Science B.V. [References: 24]
机译：由于氢化硅的反应在微电子工业中硅的等离子体增强化学气相沉积（PECVD）中的重要性，近年来氢化硅的反应已引起了相当大的关注。使用半经验分子轨道方法PM3，在0.5至9 eV的碰撞能量范围内，模拟了Si和H-2之间的反应性和非反应性碰撞轨迹。我们的结果使人们对沉积技术的最基本反应之一有了更深入的了解。振动的。据报道，SiH +产物的旋转和平移激发是冲击动能的函数。在冲击能量低于4 eV时，系统会通过以下配置：所有三个原子强烈相互作用的时间可能比一个旋转周期长几个数量级。在较高的平移能下，产​​物分布与直接反应机理一致。研究了低和高冲击能量的所有可能的能量转移机制，并讨论了对硅沉积的可能影响。 （C）2002年由Elsevier Science B.V.出版[参考文献：24]

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