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首页> 外文期刊>Journal of Micromechanics and Microengineering >Instability in micromachined curved thermal bimorph structures
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Instability in micromachined curved thermal bimorph structures

机译：微加工弯曲热双压电晶片结构中的不稳定性

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For the micromachined thermal bimorph structure, there is often initial deflection, or so-called geometrical imperfection, which may affect the stability of the structure. Here, finite element simulations and experiments are conducted to study the influences of initial deflection and actuating region on mechanical behaviors of a curved bimorph structure with clamped boundary condition. Devices are fabricated by adjusting the internal stresses of polysilicon layers on bimorph structures to achieve various initial deflections. Various actuation regions are achieved by designing different sizes of top layers covering the bottom layers of the bimorph structures. Stable and unstable regions in terms of two design factors, initial deflection ratio and bimorph ratio, are characterized by simulations and experiments. It is found that the curved bimorph structure is stable when the bottom layer is fully covered with the top layer or the initial deflection is much smaller than the structure thickness. The stable device is found to deflect in one direction only. The bimorph structure becomes unstable while the initial deflection is close to or larger than structure thickness. For unstable curved bimorph structures, we find the snap buckling effect with two-way deflections and a hysteresis loop. [References: 22]
机译：对于微加工的热双压电晶片结构，通常会出现初始变形或所谓的几何缺陷，这可能会影响结构的稳定性。在这里，进行了有限元模拟和实验，以研究初始挠度和驱动区域对具有约束边界条件的弯曲双压电晶片结构的力学行为的影响。通过调节双压电晶片结构上的多晶硅层的内部应力以实现各种初始变形来制造器件。通过设计覆盖双压电晶片结构的底层的顶层的不同尺寸来实现各种致动区域。通过模拟和实验对两个偏转因子（初始挠度比和双压电晶片比）中的稳定和不稳定区域进行了表征。发现当底层完全被顶层覆盖或初始挠度远小于结构厚度时，弯曲的双压电晶片结构是稳定的。发现稳定装置仅在一个方向上偏转。当初始变形接近或大于结构厚度时，双压电晶片结构变得不稳定。对于不稳定的弯曲双压电晶片结构，我们发现具有双向偏转和磁滞回线的卡扣屈曲效应。 [参考：22]

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