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首页> 外文期刊>Journal of Micromechanics and Microengineering >Meso scale MEMS inertial switch fabricated using an electroplated metal-on-insulator process
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Meso scale MEMS inertial switch fabricated using an electroplated metal-on-insulator process

机译：使用绝缘体上电镀金属工艺制造的中尺度MEMS惯性开关

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In this work, we report on a novel simple yet robust two-mask metal-on-insulator (MOI) process and illustrate its implementation for the fabrication of a meso scale MEMS inertial switch. The devices were fabricated of a ～40 μm thick layer of nickel electrodeposited on top of a 4 μm thick thermal field oxide (TOX) covering a single crystal silicon wafer. A 40 μm thick layer of KMPR resist was used as a mold and allowed the formation of high-aspect-ratio (1:5) metal structures. The devices were released by the sacrificial etching of the TOX layer in hydrofluoric acid. The fabricated devices were mounted in a ceramic enclosure and were characterized using both an electromagnet shaker and a drop tester. The functionality of the switch, aimed to trigger an electrical circuit when subjected to an acceleration pulse with amplitude of 300 g and duration of 200 μs, was demonstrated experimentally and the performance targets were achieved. The experimental results were consistent with the model predictions obtained through finite element simulations.
机译：在这项工作中，我们报告了一种新颖而又健壮的两层绝缘体上双掩膜金属（MOI）工艺，并说明了其用于制造中尺度MEMS惯性开关的实现方式。这些器件是由厚度约为40μm的镍层构成的，该镍层电沉积在覆盖单晶硅晶片的4μm厚的热场氧化物（TOX）的顶部。将40μm厚的KMPR抗蚀剂层用作模具，并允许形成高纵横比（1：5）的金属结构。通过在氢氟酸中牺牲性蚀刻TOX层来释放器件。将制造的设备安装在陶瓷外壳中，并使用电磁振动器和跌落测试仪对其进行表征。实验证明了该开关的功能，该功能旨在在振幅为300 g且持续时间为200μs的加速脉冲下触发电路，并达到了性能指标。实验结果与通过有限元模拟获得的模型预测一致。

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