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首页> 外文期刊>Journal of Micromechanics and Microengineering >A boron etch-stop assisted lateral silicon etching process for improved high-aspect-ratio silicon micromachining and its applications
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A boron etch-stop assisted lateral silicon etching process for improved high-aspect-ratio silicon micromachining and its applications

机译：用于改善高纵横比硅微加工的硼腐蚀停止辅助横向硅腐蚀工艺及其应用

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High-aspect-ratio micromachining (HARM) developed in recent years has made many devices more versatile compared to the surface micromachining process, but it has also met some challenges which have not occurred before. Those issues made many restrictions on HARM structure design, including structure thickness/width limitations, anchor-induced design problems, thickness uniformity and sidewall conductivity problems, which are discussed in this paper. Accordingly, we propose a novel boron etch-stop assisted lateral silicon etching (BELST) process which employs the (111) wafer process and heavy boron diffusion. Many design constraints have been reduced through some delicate designs of the BELST process. Furthermore, the process is capable of various applications, and has been applied in fabricating a dual mass-spring resonator and a micro vibrating gyroscope in this work. In summary, the developed BELST process can possess most existing merits as well as reducing many design constraints in the existing HARM process, and is expected to contribute in making HARM more competitive and convenient. [References: 20]
机译：与表面微加工工艺相比，近年来开发的高纵横比微加工（HARM）使许多设备变得更加通用，但它也遇到了一些以前未曾遇到的挑战。这些问题对HARM结构设计提出了许多限制，包括结构厚度/宽度限制，锚固引起的设计问题，厚度均匀性和侧壁导电性问题，这些将在本文中进行讨论。因此，我们提出了一种新颖的硼刻蚀停止辅助横向硅刻蚀（BELST）工艺，该工艺采用（111）晶片工艺和大量硼扩散。通过BELST工艺的一些精巧设计，减少了许多设计约束。此外，该方法能够进行多种应用，并且已经在该工作中用于制造双质量弹簧谐振器和微振动陀螺仪。总之，已开发的BELST流程可以拥有大多数现有优点，并减少现有HARM流程中的许多设计约束，并且有望有助于使HARM更具竞争力和便利性。 [参考：20]

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