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首页> 外文期刊>Journal of Micromechanics and Microengineering >Highly decoupled single-crystal silicon resonators: an approach for the intrinsic quality factor
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Highly decoupled single-crystal silicon resonators: an approach for the intrinsic quality factor

机译:高度解耦的单晶硅谐振器:一种固有品质因数的方法

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Special attention has been paid in this work to use all possible means to measure an intrinsic quality factor (Q) for silicon beam resonators realized on SOI wafers. Specifically, this work points to the energy dissipation into the support; a model is given and a high insulating system for clamped-clamped and clamped-free configurations has been studied, preserving the resonating element from support damping. Finite element analysis on these structures evidences values of Q(support) higher than 10(7). Out-of-plane and in-plane vibration Q values up to 1.0 x 10(5) have been measured under a high vacuum using, respectively, laser Doppler vibrometry and stroboscopic optical microscopy combined with image processing. The results have shown good agreement with thermoelastic theory. However, the observed agreement on the resonator dimension dependences is limited to quality factors lower than 3.0 x 10(4). Beyond these values, a physical limitation is evidenced in both cases (in-plane and out-of-plane) which does not match with the surface and clamping models listed. The role of the SOI wafer's oxide layer is discussed as a possible source of dissipation.
机译:在这项工作中,已经特别注意了使用所有可能的方法来测量SOI晶圆上实现的硅束谐振器的固有品质因数(Q)。具体来说,这项工作指出了将能量耗散到支撑件中的问题。给出了一个模型,并研究了用于夹紧-夹紧和自由夹紧构造的高绝缘系统,以防止谐振元件受到支撑阻尼的影响。对这些结构的有限元分析表明Q(支撑)的值高于10(7)。分别在高真空下使用激光多普勒振动测定法和频闪光学显微镜结合图像处理,测量了面外和面内振动Q值高达1.0 x 10(5)。结果与热弹性理论吻合良好。但是,观察到的关于谐振器尺寸依赖性的一致性仅限于低于3.0 x 10(4)的质量因数。除了这些值,在两种情况下(平面内和平面外)都证明存在物理限制,这与列出的表面模型和夹紧模型不匹配。讨论了SOI晶片氧化层的作用是可能的耗散来源。

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