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A molded surface-micromachining and bulk etching release (MOSBE) fabrication platform on (111) Si for MOEMS

机译:用于MOEMS的(111)Si上的模制表面微加工和整体蚀刻释放(MOSBE)制造平台

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摘要

This work attempts to integrate poly-Si thin film and single-crystal-silicon (SCS) structures in a monolithic process. The process integrated multi-depth DRIE (deep reactive ion etching), trench-refilled molding, a two poly-Si MUMPs process and (111) Si bulk micromachining to accomplish multi-thickness and multi-depth structures for superior micro-optical devices. In application, a SCS scanning mirror driven by self-aligned vertical comb-drive actuators was demonstrated. The stiffness of the mirror was significantly increased by thick SCS structures. The thin poly-Si film served as flexible torsional springs and electrical routings. The depth difference of the vertical comb electrodes was tuned by DRIE to increase the devices' stroke. Finally, a large moving space was available after the bulk Si etching. In summary, the present fabrication process, named (111) MOSBE (molded surface-micromachining and bulk etching release on (111) Si substrate), can further integrate with the MUMPs devices to establish a more powerful platform.
机译:这项工作试图以单片工艺集成多晶硅薄膜和单晶硅(SCS)结构。该工艺集成了多深度DRIE(深反应离子刻蚀),沟槽填充成型,两个多晶硅MUMPs工艺以及(111)硅体微加工,以实现用于高级微光学器件的多厚度和多深度结构。在应用中,演示了由自对准垂直梳状驱动器驱动的SCS扫描镜。厚的SCS结构显着提高了镜子的刚度。多晶硅薄膜用作挠性扭转弹簧和电气布线。通过DRIE调整垂直梳状电极的深度差,以增加器件的行程。最后,在大块硅刻蚀之后有较大的移动空间。综上所述,本发明的制造工艺称为(111)MOSBE(在(111)Si基板上进行模制表面微加工和批量蚀刻释放),可以进一步与MUMPs器件集成以建立更强大的平台。

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