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首页> 外文期刊>Journal of Micromechanics and Microengineering >Patterned thick photoresist layers for protection of protruding structures during wet and dry etching processes
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Patterned thick photoresist layers for protection of protruding structures during wet and dry etching processes

机译:图案化的厚光致抗蚀剂层,用于在湿法和干法蚀刻过程中保护突出结构

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摘要

Thick photoresist (about 40 mu m) was patterned and used as a protective layer for protruding structures (sharp, high aspect ratio atomic force microscope tips) in wet (buffered hydrofluoric acid) and dry (reactive ion etching) etching. The process and results of its use are discussed, and some applications are proposed. [References: 8]
机译:对厚的光刻胶(约40微米)进行构图,并用作湿法(缓冲氢氟酸)和干法(反应离子刻蚀)刻蚀中凸出结构(锋利的高纵横比原子力显微镜尖端)的保护层。讨论了其使用过程和结果,并提出了一些应用。 [参考:8]

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