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首页> 外文期刊>Journal of Micromechanics and Microengineering >Self-aligned formation of a vertical-type micro field emitter with a volcano-shaped gate electrode protruding towards the cathode by focused ion-beam sputter etching and deposition
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Self-aligned formation of a vertical-type micro field emitter with a volcano-shaped gate electrode protruding towards the cathode by focused ion-beam sputter etching and deposition

机译：垂直型微场发射器的自对准形成，通过聚焦离子束溅射刻蚀和沉积，火山形栅电极向阴极突出

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A vertical-type micro field emitter with a volcano-shaped gate electrode protruding towards the cathode was fabricated by the focused ion-beam sputter etching and deposition technique. Chromium was deposited on the silicon dioxide layer grown on the silicon substrate and patterned to be a band with width of 5 mu m and length of 20 mu m. After patterning, the oxide layer below the chromium film was etched away with hydrofluoric acid, resulting in the formation of a chromium bridge. This bridge, together with the silicon substrate, was machined by a circularly-deflected focused ion beam to make a ring-shaped erosion, leaving a small protrusion at the center. Simultaneously, sputtered silicon was deposited to the edge of the gate electrode to form a protrusion like a volcano. Formation of this protruding gate electrode was confirmed by a Monte Carlo simulation. This technique has a unique character, such that the depositing material is supplied from the back side, and may be applicable to fabrication of micromachines and so on.
机译：通过聚焦离子束溅射刻蚀和沉积技术制造了具有向阴极突出的火山形栅电极的垂直型微场发射体。铬沉积在硅基板上生长的二氧化硅层上，并被图案化为宽度为5μm，长度为20μm的带。图案化之后，用氢氟酸蚀刻掉铬膜下方的氧化物层，从而形成铬桥。该桥和硅衬底一起由圆偏转聚焦离子束加工而成环形腐蚀，在中心留下一个小的突起。同时，将溅射的硅沉积到栅电极的边缘以形成像火山一样的突起。通过蒙特卡洛模拟确认了该突出的栅电极的形成。该技术具有独特的特征，使得沉积材料是从背面供应的，并且可以适用于微机械的制造等。

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