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首页> 外文期刊>Journal of Micromechanics and Microengineering >Effects of size and defects on the elasticity of silicon nanocantilevers
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Effects of size and defects on the elasticity of silicon nanocantilevers

机译：尺寸和缺陷对硅纳米悬臂梁弹性的影响

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The size-dependent elastic behavior of silicon nanocantilevers and nanowires, specifically the effective Young's modulus, has been determined by experimental measurements and theoretical investigations. The size dependence becomes more significant as the devices scale down from micro- to nano-dimensions, which has mainly been attributed to surface effects. However, discrepancies between experimental measurements and computational investigations show that there could be other influences besides surface effects. In this paper, we try to determine to what extent the surface effects, such as surface stress, surface elasticity, surface contamination and native oxide layers, influence the effective Young's modulus of silicon nanocantilevers. For this purpose, silicon cantilevers were fabricated in the top device layer of silicon on insulator (SOI) wafers, which were thinned down to 14 nm. The effective Young's modulus was extracted with the electrostatic pull-in instability method, recently developed by the authors (H Sadeghian et al 2009 Appl. Phys. Lett. 94 221903). In this work, the drop in the effective Young's modulus was measured to be significant at around 150 nm thick cantilevers. The comparison between theoretical models and experimental measurements demonstrates that, although the surface effects influence the effective Young's modulus of silicon to some extent, they alone are insufficient to explain why the effective Young's modulus decreases prematurely. It was observed that the fabrication-induced defects abruptly increased when the device layer was thinned to below 100 nm. These defects became visible as pinholes during HF-etching. It is speculated that they could be the origin of the reduced effective Young's modulus experimentally observed in ultra-thin silicon cantilevers.
机译：硅纳米悬臂和纳米线的尺寸依赖性弹性行为，特别是有效的杨氏模量，已通过实验测量和理论研究确定。随着器件尺寸从微米级缩小到纳米级，尺寸依赖性变得越来越重要，这主要归因于表面效应。但是，实验测量结果与计算研究结果之间的差异表明，除了表面效应之外，还可能存在其他影响。在本文中，我们试图确定表面效应（例如表面应力，表面弹性，表面污染和自然氧化物层）在多大程度上影响硅纳米悬臂梁的有效杨氏模量。为此，在绝缘体上硅（SOI）晶片的顶部器件层中制造了硅悬臂，该硅悬臂被减薄至14 nm。有效的杨氏模量是通过作者最近开发的静电吸合不稳定性方法提取的（H Sadeghian等，2009 Appl。Phys。Lett。94 221903）。在这项工作中，测得的有效杨氏模量的下降在大约150 nm厚的悬臂处非常明显。理论模型和实验测量结果之间的比较表明，尽管表面效应在一定程度上影响硅的有效杨氏模量，但仅靠表面效应不足以解释为何有效杨氏模量过早降低。观察到，当将器件层减薄至100 nm以下时，制造引起的缺陷急剧增加。这些缺陷在HF蚀刻过程中作为针孔可见。据推测，它们可能是在超薄硅悬臂梁上实验观察到的有效杨氏模量降低的起源。

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