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首页> 外文期刊>Journal of Micromechanics and Microengineering >Pattern transfer on a vertical cavity sidewall using SU8
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Pattern transfer on a vertical cavity sidewall using SU8

机译：使用SU8在垂直腔侧壁上进行图案转印

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摘要

In this paper, a process to realize metal lines on the sidewall of high aspect ratio cavities is developed. As an alternative to conventional photoresist, SU8 is used to define patterns on vertical sidewalls of deep cavities while maintaining compatibility with conventional IC processes. When transferring a pattern onto a 3D structure, especially the coating process, cavity filling and step coverage become important issues and require specific attention. A highly uniform SU8 coating is obtained and 20μm wide aluminium lines across 60μm deep cavities are realized. Problems related to overexposure and to aluminium etching are presented as well. The resistance of the aluminium structures on top, bottom and sidewall of the cavities is measured and discussed.
机译：在本文中，开发了一种在高纵横比腔体的侧壁上实现金属线的工艺。作为常规光刻胶的替代品，SU8用于在深腔垂直侧壁上定义图案，同时保持与常规IC工艺的兼容性。当将图案转移到3D结构上时，尤其是涂层过程，型腔填充和台阶覆盖率成为重要问题，需要特别注意。获得高度均匀的SU8涂层，并实现了跨越60μm深腔的20μm宽铝线。还提出了与过度曝光和铝蚀刻有关的问题。测量并讨论了空腔顶部，底部和侧壁上的铝结构的电阻。

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