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首页> 外文期刊>Journal of Micromechanics and Microengineering >Study of lateral mode SOI-MEMS resonators for reduced anchor loss
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Study of lateral mode SOI-MEMS resonators for reduced anchor loss

机译：降低锚固损耗的横向模式SOI-MEMS谐振器的研究

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MEMS resonators fabricated in silicon-on-insulator (SOI) technology must be clamped to the substrate via anchoring stems connected either from within the resonator or through the sides, with the side-clamped solution often employed due to manufacturing constraints. This paper examines the effect of two types of commonly used side-clamped, anchoring-stem geometries on the quality factor of three different laterally-driven resonator topologies. This study employs an analytical framework which considers the relative distribution of strain energies between the resonating body and clamping stems. The ratios of the strain energies are computed using ANSYS FEA and used to provide an indicator of the expected anchor-limited quality factors. Three MEMS resonator topologies have been fabricated and characterized in moderate vacuum. The associated measured quality factors are compared against the computed strain energy ratios, and the trends are shown to agree well with the experimental data.
机译：采用绝缘体上硅（SOI）技术制造的MEMS谐振器必须通过从谐振器内部或通过侧面连接的锚定杆固定在基板上，由于制造限制，通常采用侧面固定的解决方案。本文研究了两种常用的侧边夹紧，锚杆几何形状对三种不同的横向驱动谐振器拓扑结构的品质因数的影响。这项研究采用了一个分析框架，该框架考虑了共振体和夹紧杆之间应变能的相对分布。应变能的比率是使用ANSYS FEA计算得出的，可用于提供预期的锚固件质量因数的指标。已经制造了三种MEMS谐振器拓扑，并在中等真空度下进行了表征。将相关的测量质量因数与计算出的应变能比进行比较，并显示出与实验数据吻合良好的趋势。

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