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首页> 外文期刊>Journal of Micromechanics and Microengineering >Conductive microtip electrode array with variable aspect ratio using combination process of reactive ion etching
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Conductive microtip electrode array with variable aspect ratio using combination process of reactive ion etching

机译:结合反应离子刻蚀工艺的长宽比可变的导电微尖端电极阵列

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摘要

A micromachining process for a conductive microtip electrode array has been developed using a combination process of reactive ion etching. A localized conical ultra-micro electrode (UME) with submicron width is realized on the tip end for electrochemical measurements. A height of several tens of microns of the silicon microtip is achieved, and the area beyond the UME is covered with dielectric material for electrical insulation. A high-aspect-ratio silicon microtip is fabricated using anisotropic and isotropic etching with varying the gap and diameter of the etch masks. Cyclic voltammetry is conducted to characterize the electrochemical properties of the UMEs. The results indicate that the electrical connection on the UME works successfully, and the measured peak currents were found to be in good agreement with the values estimated from analysis based on conical UME theory.
机译:已经使用反应性离子蚀刻的组合工艺开发了用于导电微尖端电极阵列的微加工工艺。在尖端上实现了亚微米宽度的局部锥形超微电极(UME),用于电化学测量。硅微尖端的高度达到了几十微米,而UME以外的区域被电绝缘材料覆盖。使用具有各向异性和各向同性的蚀刻方法,改变蚀刻掩模的间隙和直径,可以制造出具有高纵横比的硅微尖端。进行循环伏安法以表征UME的电化学性质。结果表明,UME上的电连接工作正常,并且测得的峰值电流与基于圆锥形UME理论分析得出的估计值非常吻合。

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