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首页> 外文期刊>Journal of Micromechanics and Microengineering >Iridium oxide deposited by pulsed dc-sputtering for stimulation electrodes
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Iridium oxide deposited by pulsed dc-sputtering for stimulation electrodes

机译:通过脉冲直流溅射沉积刺激电极上的氧化铱

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摘要

A pulsed-dc reactive sputtering technique was used for iridium oxide thin-film deposition. Pulsing frequency and oxygen flow were varied over several deposition cycles, regarding stimulation electrode applications. Surface and electrochemical analysis were performed for deposition evaluation. The results show the influence of the oxygen flow to the morphology and the electrochemical properties of the reactively sputtered films. Optimal surface structure and electrochemical properties for films deposited at 0.016 mbar working pressure, 100 kHz pulse frequency and 1μs pulsewidth can be achieved at oxygen flows around 8 to 10 sccm.
机译:脉冲直流反应溅射技术用于氧化铱薄膜的沉积。关于刺激电极的应用,脉冲频率和氧气流量在几个沉积周期内变化。进行表面和电化学分析以进行沉积评估。结果表明氧气流量对反应溅射膜的形貌和电化学性能的影响。在氧气流量为8至10 sccm的情况下,在0.016 mbar工作压力,100 kHz脉冲频率和1μs脉冲宽度下沉积的薄膜可获得最佳的表面结构和电化学性能。

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