Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements

Longeaud C; Schmidt JA; Koropecki RR; Kleider JP

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Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements

机译：通过光电导测量确定氢化非晶硅态密度参数

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In this paper, after a short recall of the information that can be extracted from different experiments based on the photoconductivity properties of a semiconductor, we present experimental results obtained on a thin film of hydrogenated amorphous silicon in the as-deposited, light-soaked and annealed states We show that, taking advantage of the apparent discrepancies between the results of dc photoconductivity and modulated photoconductivity, density of states distributions as well as some of their capture coefficients can be deduced The evolution of these quantities with light-soaking and annealing is also shown The experimental results are also illustrated by means of numerical simulations

机译：在本文中，我们简短回顾了可以根据半导体的光电导特性从不同实验中提取的信息，然后介绍了在沉积，光浸和沉积的氢化非晶硅薄膜上获得的实验结果。退火态我们表明，利用直流光电导和调制光电导结果之间的明显差异，可以推断出态分布的密度以及它们的某些俘获系数。显示了实验结果，也通过数值模拟进行了说明

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《Journal of optoelectronics and advanced materials》 |2009年第9期|共8页
作者
Longeaud C; Schmidt JA; Koropecki RR; Kleider JP;
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正文语种 eng
中图分类光电子技术、激光技术;
关键词
Thin films; Photoconductivity; Computer simulation;

机译：薄膜;光电导;计算机仿真;

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1. Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements [J] . Longeaud C, Schmidt JA, Koropecki RR, Journal of optoelectronics and advanced materials . 2009,第9期

机译：通过光电导测量确定氢化非晶硅态密度参数
2. Hydrogenated amorphous silicon characterization from steady state photoconductive measurements [J] . Kopprio Leonardo, Longeaud Christophe, Schmidt Javier Semiconductor science and technology . 2019,第4期

机译：通过稳态光电导测量表征氢化非晶硅
3. Hydrogenated amorphous silicon characterization from steady state photoconductive measurements [J] . Kopprio Leonardo, Longeaud Christophe, Schmidt Javier Semiconductor science and technology . 2019,第4期

机译：稳态光电导测量的氢化非晶硅表征
4. Initial Growth Of Thin Hydrogenated Amorphous Silicon Layer On Low Conductivity Substrates Monitored By In-situ Transient Microwave Photoconductivity Measurements [C] . Heinz-Christoph Neitzert, Marinus Kunst International Conference on the Physics of Semiconductors . 2009

机译：通过原位瞬态微波光电电导光测量监测的低导电性基材上的薄氢化非晶硅层的初始生长
5. A density of states and joint density of states analysis of hydrogenated amorphous silicon. [D] . Malik, Saad Mehmood. 2002

机译：氢化非晶硅的状态密度和状态的联合密度分析。
6. Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process [O] . Israel Vivaldo, Roberto C. Ambrosio, Roberto López, 2020

机译：通过快速热退火工艺增强氢化非晶碳化硅薄膜的光致发光
7. Initial Growth Of Thin Hydrogenated Amorphous Silicon Layer On Low Conductivity Substrates Monitored By In-situ Transient Microwave Photoconductivity Measurements [O] . Heinrich Christoph NEITZERT, Marinus KUNST 2009

机译：通过原位瞬态微波光电导率测量监测低电导率基板上的薄氢化非晶硅层的初始生长

Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements

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