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首页> 外文期刊>Journal of optoelectronics and advanced materials >Interface roughness and exchange bias - Coercivity ratio in Pulsed-DC magnetron sputtered NiFe/IrMn/CoFe exchange bias trilayers
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Interface roughness and exchange bias - Coercivity ratio in Pulsed-DC magnetron sputtered NiFe/IrMn/CoFe exchange bias trilayers

机译:界面粗糙度和交换偏压-脉冲直流磁控溅射NiFe / IrMn / CoFe交换偏压三层中的矫顽比

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Ta/Ru/Ta/Ni_(81)Fe_(19)/Ir_(20)Mn _(80)/Co_(90)Fe_(10) exchange bias multilayer was grown by using pulsed DC unbalanced magnetron sputtering technique. The deposition pulse frequency of the NiFe seed layer has been varied between 10 - 50 kHz, by keeping all parameters of the remaining layers constant. The evolutions of the grain size, texture, interface roughness and the exchange bias (H_(ex)) and coercivity fields (H_c) including the H_(ex)/H_c ratio have been systematically investigated. Grain size of the IrMn layer changes in the range of 8.9 nm-22 nm by constant layer thicknesses. The H ex is directly affected by the IrMn grain size for the bottom NiFe/IrMn interface, while it remains nearly insensitive to the grain size for the top IrMn/CoFe interface. The H_(ex) at the NiFe/IrMn interface is largest if the grain size of the IrMn layer is same as the IrMn layer thickness. A direct relationship between the Hc and grain size values was not observed; however, the H_c is predominantly affected by the roughness of NiFe/IrMn and IrMn/CoFe interfaces. Results reveal that the texture and interface roughness plays an important role on the Hex/H_c ratio and deposition conditions for the ferromagnetic layer can be optimized using the variable deposition pulse frequency for a high Hex/H _c ratio in the investigated trilayer EB system.
机译:通过使用脉冲直流不平衡磁控溅射技术生长Ta / Ru / Ta / Ni_(81)Fe_(19)/ Ir_(20)Mn_(80)/ Co_(90)Fe_(10)交换偏压多层。通过保持其余层的所有参数恒定,NiFe籽晶层的沉积脉冲频率已在10-50 kHz之间变化。系统地研究了晶粒尺寸,织构,界面粗糙度和交换偏压(H_(ex))和矫顽力场(H_c)的演变,包括H_(ex)/ H_c比。通过恒定的层厚度,IrMn层的晶粒尺寸在8.9nm-22nm的范围内变化。 H ex受底部NiFe / IrMn界面的IrMn晶粒尺寸的直接影响,而对顶部IrMn / CoFe界面的晶粒尺寸几乎不敏感。如果IrMn层的晶粒尺寸与IrMn层的厚度相同,则NiFe / IrMn界面处的H_(ex)最大。没有观察到Hc和晶粒尺寸值之间的直接关系;但是,H_c主要受NiFe / IrMn和IrMn / CoFe界面的粗糙度影响。结果表明,织构和界面粗糙度对Hex / H_c比起重要作用,在研究的三层EB系统中,对于高Hex / H _c比,可以使用可变的沉积脉冲频率来优化铁磁层的沉积条件。

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