A new zinc-blende type photoelectronic single crystal, Hg(3-3x)In2x Te-3(MIT), was grown by using the vertical Bridgman method. The structure of the MIT (x = 0.5) crystal was examined by x-ray powder diffraction. The lattice parameters were determined to be 6.2934 +/- 0.0011 angstrom with a defect zinc-blende structure, which belongs to the group F (4) over bar 3m. The melting point of the MIT crystal was measured by using the differential scanning calorimetry. Hall effect measurements on electrical properties at room temperature show that resistivity, carrier density and mobility of MIT crystal were 4.79 x 10(2) Omega cm, 2.83 x 10(13) cm(-3) and 4.60 x 10(2) cm(2) V-1 s(-1), respectively. The electron effective mass at the bottom of the conduction band and the top of the valence band was calculated. It was found that the Fermi level of the MIT crystal was about 0.008 eV higher than that of the mid-gap. The experimental carrier concentration was in good accordance with the theoretical result.
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机译：利用垂直布里奇曼法生长了一种新型的闪锌矿型光电单晶Hg（3-3x）In2x Te-3（MIT）。通过X射线粉末衍射检查了MIT（x ＝ 0.5）晶体的结构。晶格参数确定为6.2934 +/- 0.0011埃，具有缺陷的闪锌矿结构，在3m钢筋上属于F（4）组。通过使用差示扫描量热法测量MIT晶体的熔点。室温下对电性能的霍尔效应测量表明，MIT晶体的电阻率，载流子密度和迁移率分别为4.79 x 10（2）Ωcm，2.83 x 10（13）cm（-3）和4.60 x 10（2）cm（ 2）分别为V-1 s（-1）。计算了导带底部和价带顶部的电子有效质量。发现MIT晶体的费米能级比中间能隙高约0.008eV。实验载流子浓度与理论结果吻合良好。
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