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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Structural, optical and magnetic properties of Ga1-xMnxN films grown by MOCVD
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Structural, optical and magnetic properties of Ga1-xMnxN films grown by MOCVD

机译：MOCVD生长的Ga1-xMnxN薄膜的结构，光学和磁性

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摘要

In this paper, we have investigated the structural, optical and magnetic properties of Ga1-xMnxN films grown by MOCVD. The valence band structure was analysed by the x-ray photoelectron spectroscopy (XPS) measurements. A different Fermi level shift behaviour was observed with increasing Mn composition in the GaN. This shift behaviour was attributed to the donor-like defects induced by the Mn doping in the heavily doped samples. The presence of these defects was further confirmed by the calthodoluminescence spectra. The additional peak around 2.0 eV in the heavily doped samples corresponds to the intra-d-shell transitions of Mn2+. This Mn2+ state was formed by trapping the electrons released from the donor-like defects, which is quite consistent with the XPS results. Finally, the magnetic properties were also discussed in combination with the above results.
机译：在本文中，我们研究了通过MOCVD生长的Ga1-xMnxN薄膜的结构，光学和磁性。通过X射线光电子能谱（XPS）测量来分析价带结构。随着GaN中Mn含量的增加，观察到了不同的费米能级行为。这种偏移行为归因于在重掺杂样品中Mn掺杂引起的供体样缺陷。这些缺陷的存在通过光致发光光谱进一步证实。重掺杂样品中约2.0 eV的附加峰对应于Mn2 +的d-壳内跃迁。 Mn2 +态是通过俘获从供体样缺陷释放的电子而形成的，这与XPS结果完全一致。最后，结合以上结果对磁性能进行了讨论。

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