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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >In situ deposition of Sn-doped CdS thin films by chemical bath deposition and their characterization
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In situ deposition of Sn-doped CdS thin films by chemical bath deposition and their characterization

机译：化学浴沉积原位沉积Sn掺杂CdS薄膜及其表征

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摘要

In-situ Sn-doped CdS thin films have been deposited successfully by the chemical bath deposition method using tartaric acid as a complexing agent. The films have been characterized by x-ray diffraction for structure determination, and microstructural parameters like crystallite size, rms strain and dislocation density have been calculated using x-ray line profile analysis. The composition of the films has been determined by x-ray photoelectron spectroscopy and energy dispersive x-ray analysis. Optical studies show that the band gap decreases significantly for pure CdS (2.39 eV) to 3.8 mol% of Sn-doped CdS (1.84 eV). A detailed PL study of CdS when doped with varying Sn concentrations has also been discussed. Temperature variation of the electrical resistivity of Sn-doped CdS thin films confirmed their semiconducting behaviour similar to the pure CdS. It also shows that doping of Sn in CdS makes a pronounced drop in the room temperature resistivity value from 10(10) - 10(3) Omega cm for pure CdS to 3.8 mol% of Sn- doped CdS, respectively.
机译：通过使用酒石酸作为络合剂的化学浴沉积方法已经成功沉积了原位掺杂Sn的CdS薄膜。已通过X射线衍射对膜进行了表征，以确定结构，并使用X射线线轮廓分析计算了微结构参数，如微晶尺寸，均方根应变和位错密度。膜的组成已经通过X射线光电子能谱和能量色散X射线分析来确定。光学研究表明，纯CdS（2.39 eV）的带隙显着降低至3.8 mol％的Sn掺杂CdS（1.84 eV）。还讨论了掺杂不同锡浓度的CdS的详细PL研究。掺锡CdS薄膜电阻率的温度变化证实了其半导体行为类似于纯CdS。这也表明，在CdS中掺杂Sn会使室温电阻率值从纯CdS的10（10）-10（3）Ωcm分别下降到3.8 mol％的Sn掺杂CdS。

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