Poly(p-phenylenevinylene)-based field-effect transistors with platinum source-drain electrodes

Kayashima H; Yasuda T; Fujita K; Tsutsui T

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Poly(p-phenylenevinylene)-based field-effect transistors with platinum source-drain electrodes

机译：带有铂源漏电极的基于聚对苯乙炔的场效应晶体管

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Organic field-effect transistors (FETs) have been fabricated by using poly(p-phenylenevinylene) (PPV) films prepared from a water soluble precursor polymer and p-channel FET conduction was obtained by using platinum source-drain electrodes. When the conversion temperatures for preparing PPV films changed between 180 and 280 degrees C, the field-effect hole mobilities changed between 4.3 x 10(-4) and 8.4 x 10(-6) cm(2) V-1 s(-1). The highest field-effect hole mobility was seen on the PPV thermally converted at 180 degrees C. The decreases in field-effect mobilities in the PPV films with further extended average p-conjugation length converted at higher temperatures were ascribed to morphological defects owing to crystallization.

机译：已经通过使用由水溶性前体聚合物制备的聚对苯撑乙烯撑（PPV）膜来制造有机场效应晶体管（FET），并通过使用铂源漏电极获得了p沟道FET的导电性。当制备PPV膜的转化温度在180到280摄氏度之间变化时，场效应空穴迁移率在4.3 x 10（-4）和8.4 x 10（-6）cm（2）V-1 s（-1）之间变化）。在180℃下热转化的PPV上观察到最高的场效应空穴迁移率。在更高的温度下，具有进一步延长的平均p共轭长度的PPV膜中，场效应迁移率的降低归因于结晶导致的形态缺陷。

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《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2007年第6期|共3页
作者
Kayashima H; Yasuda T; Fujita K; Tsutsui T;
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正文语种 eng
中图分类应用物理学;
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CONJUGATED POLYMERS; VINYLENE);

机译：共轭聚合物;乙烯）;

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1. Poly(p-phenylenevinylene)-based field-effect transistors with platinum source-drain electrodes [J] . Kayashima H, Yasuda T, Fujita K, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2007,第6期

机译：带有铂源漏电极的基于聚对苯乙炔的场效应晶体管
2. The polymer gate dielectrics and source-drain electrodes on n-type pentacene-based organic field-effect transistors [J] . Jer-Wei Chang, Wei-Lien Hsu, Chang-Yo Wu, Organic Electronics . 2010,第10期

机译：n型并五苯有机场效应晶体管上的聚合物栅极电介质和源漏电极
3. Field-effect transistors based on poly(p-phenylenevinylene) derivatives [J] . Muratsubaki M, Furukawa Y, Noguchi T, Chemistry Letters . 2004,第11期

机译：基于聚对亚苯基亚乙烯基衍生物的场效应晶体管
4. p- and n-Type Charge Transport in Field-Effect Transistors of Pristine Poly(p-Phenylenevinylene) [C] . Hiroshi Kayashima, Takeshi Yasuda, Katsuhiko Fujita, Materials Research Society Symposium on Organic Electronics . 2006

机译：原始聚（对苯乙烯）的场效应晶体管中的P-和N型电荷传输
5. Charge injection and transport in regioregular poly(3-hexylthiophene)-based field-effect transistors. [D] . Singh, Kumar Abhishek. 2010

机译：基于区域规则的聚（3-己基噻吩）的场效应晶体管中的电荷注入和传输。
6. Optically switchable organic field-effect transistors based on photoresponsive gold nanoparticles blended with poly(3-hexylthiophene) [O] . Corinna Raimondo, Núria Crivillers, Federica Reinders, 2012

机译：基于光响应性金纳米粒子与聚（3-己基噻吩）混合的光开关有机场效应晶体管
7. Origin of the ambipolar operation of a pentacene field-effect transistor fabricated on a poly(vinyl alcohol)-coated Ta2O5 gate dielectric with Au source/drain electrodes [O] . Takebayashi Satoko, Abe Shigeomi, Saiki Koichiro, 2009

机译：在具有Au源/漏电极的聚乙烯醇涂层Ta2O5栅极电介质上制造并五苯场效应晶体管的双极性操作的起源
8. Poly-3-Methylthiophene Coated Electrodes. Optical and Electrical Properties as a Function of Redox Potential and Amplification of Electrical and Chemical Signals Using Poly-3-Methylthiophene-Based Microelectrochemical Transistors [R] . Thackeray, J. W., White, H. S., Wrighton, M. S. 1985

机译：聚-3-甲基噻吩涂层电极。使用聚-3-甲基噻吩基微电化学晶体管作为氧化还原电位的函数的光学和电学性质以及电学和化学信号的放大

Poly(p-phenylenevinylene)-based field-effect transistors with platinum source-drain electrodes

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