...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Comprehensive study of (Al) GaAsSi-doping using reflectance anisotropy spectroscopy in metal-organic vapour-phase epitaxy
【24h】

Comprehensive study of (Al) GaAsSi-doping using reflectance anisotropy spectroscopy in metal-organic vapour-phase epitaxy

机译：金属有机蒸气相外延中使用反射各向异性光谱对（Al）GaAsSi掺杂的综合研究

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The n-type doping of (Al) GaAs grown on GaAs using silicon (Si) was studied in metal-organic vapour-phase epitaxy using reflectance anisotropy spectroscopy. The reflectance anisotropy (RA) of GaAs was measured on undoped layers and on layers with increasing Si n-type doping concentrations up to 1 x 10(20) cm(-3). It was found that the RA still changes even though the carrier concentration stays constant and only the Si concentration in the crystal lattice is increasing at values above 5 x 10(18) cm(-3). The doping dependence of the RA of AlxGa1-xAs layers up to aluminium concentrations of x = 0.7 is similar to the GaAs case with an increasing amplitude while for highly doped AlAs it is slightly different. While the broad peak in the RA spectra around 3.9 eV of Si-doped GaAs and AlxGa1-xAs up to x = 0.7 shows a steady decrease with increasing doping concentration the RA of AlAs in this spectral region shows a shift of the peak towards lower photon energies and an increase in amplitude for doping concentrations above 2 x 10(18) cm(-3). Finally, the temperature dependence was studied for Al0.5Ga0.5As showing that the influence of the doping on the RA spectra is decreasing with increasing temperature.
机译：使用反射各向异性光谱技术，在金属有机气相相外延技术中研究了使用硅（Si）在GaAs上生长的（Al）GaAs的n型掺杂。 GaAs的反射率各向异性（RA）是在未掺杂的层和Si n型掺杂浓度增加到1 x 10（20）cm（-3）的层上测量的。发现即使载流子浓度保持恒定并且仅晶格中的Si浓度在高于5 x 10（18）cm（-3）的值处增加，RA仍会改变。直到铝浓度x = 0.7时，AlxGa1-xAs层的RA的掺杂依赖性与GaAs情况相似，幅度增加，而对于高掺杂AlAs则略有不同。虽然在3.9 eV左右的Si掺杂的GaAs和AlxGa1-xAs的RA光谱中的宽峰在x = 0.7处显示出随着掺杂浓度的增加而稳步下降，但在该光谱区域中AlAs的RA显示出该峰向较低的光子移动能量和掺杂浓度高于2 x 10（18）cm（-3）的幅度增加。最后，研究了Al0.5Ga0.5As的温度依赖性，结果表明掺杂对RA光谱的影响随着温度的升高而减小。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号