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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Characteristics of low-temperature pulse-laser-deposited (Pb,Sr)TiO3 films in metal/ferroelectric/silicon structure
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Characteristics of low-temperature pulse-laser-deposited (Pb,Sr)TiO3 films in metal/ferroelectric/silicon structure

机译：金属/铁电/硅结构中低温脉冲激光沉积（Pb，Sr）TiO3薄膜的特性

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摘要

In this study, pulsed- laser deposited ( Pb, Sr) TiO3 ( PSrT) films on p- type Si were studied at low substrate temperatures ranging from 300 to 450 degrees C for metal/ ferroelectric/ semiconductor applications. The substrate temperature strongly enhances film crystallinity without significant inter- diffusion at the PSrT/ Si interface and affects the electrical properties. As the substrate temperature increases, the films have smaller leakage currents, fewer trap states at the electrode interfaces, clockwise capacitance versus applied field hysteresis loops and larger memory windows correlated with superior crystallinity. Conversely, 300 degrees C- deposited films exhibit a small and counterclockwise loop with a positive shift of the flatband voltage, attributed to more negative trap charges within the films. However, the high substrate temperature ( 450 degrees C) may produce serious Pb - O volatilization, incurring more defects and leakage degradation. The analyses of fixed charge density and flatband voltage shift reveal the trap status and agree well with the leakage characteristic. An electron band model of the Pt/ PSrT/ Si electronic structure is proposed to explain the electrical behaviour. The excellent fatigue endurance with a small variation of memory windows (< 11%) after 1010 switching is also demonstrated.
机译：在这项研究中，在金属/铁电/半导体应用中，在300至450摄氏度的低基板温度下，研究了在p型硅上的脉冲激光沉积（Pb，Sr）TiO3（PSrT）膜。基板温度会大大提高薄膜的结晶度，而不会在PSrT / Si界面上产生明显的相互扩散，并会影响电性能。随着基板温度的升高，薄膜具有较小的泄漏电流，电极界面处的陷阱状态较少，顺时针电容与施加的场磁滞回线之间的关系以及与优异结晶度相关的较大存储窗口。相反，在300摄氏度下沉积的薄膜呈现出一个小的逆时针环路，其平带电压发生正向偏移，这归因于薄膜内更多的负陷阱电荷。但是，较高的基板温度（450摄氏度）可能会导致严重的Pb-O挥发，从而导致更多缺陷和泄漏劣化。固定电荷密度和平带电压漂移的分析揭示了陷阱状态，并且与泄漏特性非常吻合。提出了Pt / PSrT / Si电子结构的电子能带模型来解释其电学行为。还证明了1010切换后具有极佳的耐疲劳性，且存储窗口的变化很小（<11％）。

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