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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Morphology transformation of patterned, uniform and faceted GaN microcrystals
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Morphology transformation of patterned, uniform and faceted GaN microcrystals

机译：图案化，均匀且多面的GaN微晶的形态转变

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摘要

We report on the growth and characterization of patterned and uniformly distributed GaN microcrystals with well-defined facets and epitaxy. The microcrystals were grown on a mask patterned by lithography. The GaN microcrystals were formed by selective-area epitaxy using metal-organic chemical-vapour deposition. The GaN microcrystals have similar sizes and shapes. Each microcrystal consists of an upper and a lower part, which are rotated by 30 degrees. Transmission electron microscopy shows that there is a rather clear interface between the two parts of the crystal, suggesting a sudden change in the growth direction. We performed ab initio calculations for the surface energies of hexagonal GaN, and the growth morphology is explained based on surface energy considerations.
机译：我们报告的生长和表征的图案和均匀分布的GaN微晶具有明确的方面和外延。使微晶生长在通过光刻图案化的掩模上。使用金属有机化学气相沉积法通过选择性区域外延形成GaN微晶。 GaN微晶具有相似的尺寸和形状。每个微晶由上下旋转30度的部分组成。透射电子显微镜显示晶体的两个部分之间有相当清晰的界面，表明生长方向突然改变。我们对六角形GaN的表面能进行了从头算，并基于表面能考虑了生长形态。

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